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PD55035-E
PD55035-E
761-PD55035-E
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PD55035-E datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at HK JDW
In Stock : 999
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Product Details
Purchasing and Inquiry
PD55035-E Description
The PD55035-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high-gain, broadband commercial, and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55035-E boasts the excellent gain, linearity, and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO10RF. The device’s superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC-approved, high-power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly.
PD55035-E Features
Excellent thermal stability
Common source configuration
POUT = 35 W with 16.9dB gain @ 500 MHz / 12.5 V
New RF plastic package
PD55035-E Applications
Automotive
Infotainment & cluster
Communications equipment
Broadband fixed line access
Personal electronics
Connected peripherals & printers
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PD55035-E
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