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  • PBLS2001S,115

PBLS2001S,115

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Manufacturer No:

PBLS2001S,115

Manufacturer:

NXP Semiconductors

HK JDW NO:

318-PBLS2001S,115

Package:

8-SOIC (0.154, 3.90mm Width)

Datasheet:

PBLS2001S,115

Description:

TRANS NPN PREBIAS/PNP 1.5W 8SO

Quantity:

In Stock : 999

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From $40.00 basic shipping fee depend on zone and country.
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From $40.00 basic shipping fee depend on zone and country.
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From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

PBLS2001S,115

technical specifications, attributes, parameters and parts with similar specifications to PBLS2001S,115.

  • Type
    Parameter
    Select All
  • Mounting Type

    Surface Mount

  • Package / Case

    8-SOIC (0.154, 3.90mm Width)

  • Surface Mount

    YES

  • Transistor Element Material

    SILICON

  • Packaging

    Tape & Reel (TR)

  • Published

    2009

  • JESD-609 Code

    e4

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    8

  • ECCN Code

    EAR99

  • Terminal Finish

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Additional Feature

    BUILT-IN BIAS RESISTOR RATIO IS 1

  • HTS Code

    8541.21.00.95

  • Subcategory

    Other Transistors

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

  • Base Part Number

    PBLS2001

  • Pin Count

    8

  • JESD-30 Code

    R-PDSO-G8

  • Qualification Status

    Not Qualified

  • Operating Temperature (Max)

    150°C

  • Number of Elements

    2

  • Configuration

    SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

  • Power - Max

    1.5W

  • Transistor Application

    SWITCHING

  • Polarity/Channel Type

    NPN AND PNP

  • Transistor Type

    1 NPN Pre-Biased, 1 PNP

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    30 @ 20mA 5V / 150 @ 2A 2V

  • Current - Collector Cutoff (Max)

    1μA 100nA

  • Vce Saturation (Max) @ Ib, Ic

    150mV @ 500μA, 10mA / 355mV @ 300mA, 3A

  • Voltage - Collector Emitter Breakdown (Max)

    50V 20V

  • Current - Collector (Ic) (Max)

    100mA 3A

  • Transition Frequency

    100MHz

  • Frequency - Transition

    100MHz

  • Power Dissipation-Max (Abs)

    1.5W

  • Resistor - Base (R1)

    2.2k Ω

  • Resistor - Emitter Base (R2)

    2.2k Ω

  • Turn Off Time-Max (toff)

    205ns

  • Turn On Time-Max (ton)

    41ns

  • RoHS Status

    ROHS3 Compliant

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United Kingdom/GBP Summary
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