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NSVBAS21SLT1G

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Manufacturer No:

NSVBAS21SLT1G

Manufacturer:

ON Semiconductor

HK JDW NO:

598-NSVBAS21SLT1G

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

NSVBAS21SLT1G

Description:

NSVBAS21SLT1G datasheet pdf and Diodes - Rectifiers - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 81

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Product Details

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Product Description:

The NSVBAS21SLT1G is a high-performance Schottky barrier diode designed to provide efficient rectification and voltage clamping in various electronic circuits. With its advanced semiconductor technology, this diode offers low forward voltage drop and fast switching characteristics, making it suitable for applications demanding high-speed performance and low power loss.


Features:


Low Forward Voltage Drop: The NSVBAS21SLT1G Schottky diode features a low forward voltage drop, which minimizes power loss and enhances energy efficiency.


Fast Switching Speed: This diode exhibits fast switching characteristics, allowing for rapid switching between conducting and non-conducting states.


High Current Handling: The NSVBAS21SLT1G can handle moderate to high currents, making it suitable for power rectification and voltage clamping tasks.


SOD-123FL Package: The SOD-123FL package provides compact size and ease of installation on circuit boards.


High Junction Temperature: With a high junction temperature rating, this diode can withstand elevated operating conditions.


Avalanche Energy Rating: The diode has a high avalanche energy rating, making it suitable for applications that may involve transient voltage spikes.


Applications:

The NSVBAS21SLT1G Schottky diode finds applications in various electronic systems, including:


Rectification: It's commonly used in rectifier circuits to efficiently convert alternating current (AC) to direct current (DC).


Voltage Clamping: The diode can be employed for voltage clamping applications, protecting sensitive components from voltage spikes.


Power Supplies: It's utilized in power supply circuits to rectify and regulate voltage levels.


High-Speed Switching: Due to its fast switching characteristics, it's suitable for high-frequency switching applications.


Reverse Polarity Protection: The diode can serve as a reverse polarity protection component to prevent damage from incorrect power connections.


Signal Demodulation: In communication circuits, it can be used for signal demodulation due to its efficient switching.


In summary, the NSVBAS21SLT1G Schottky diode offers efficient rectification, voltage clamping, and fast switching capabilities. Whether you're working on power supplies, high-speed switching, reverse polarity protection, or other applications, this diode's low voltage drop, fast switching speed, and high current handling contribute to improved overall system performance and reliability.


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

NSVBAS21SLT1G

technical specifications, attributes, parameters and parts with similar specifications to NSVBAS21SLT1G.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    4 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 1 week ago)

  • Packaging

    Tape & Reel (TR)

  • Published

    2007

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Max Operating Temperature

    150°C

  • Min Operating Temperature

    -55°C

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Contact Plating

    Tin

  • Number of Pins

    3

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

  • Mounting Type

    Surface Mount

  • Technology

    SCHOTTKY

  • JESD-609 Code

    e3

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Pin Count

    3

  • Surface Mount

    YES

  • Subcategory

    Rectifier Diodes

  • Reference Standard

    AEC-Q101

  • Diode Element Material

    SILICON

  • Number of Elements

    2

  • Configuration

    SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

  • Diode Type

    Standard

  • Output Current-Max

    0.225A

  • Forward Current

    225mA

  • Speed

    Fast Recovery =< 500ns, > 200mA (Io)

  • Current - Reverse Leakage @ Vr

    100μA @ 200V

  • Voltage - Forward (Vf) (Max) @ If

    1.25V @ 200mA

  • Operating Temperature - Junction

    -55°C~150°C

  • Max Reverse Voltage (DC)

    250V

  • Average Rectified Current

    225mA

  • Peak Reverse Current

    100nA

  • Max Repetitive Reverse Voltage (Vrrm)

    250V

  • Peak Non-Repetitive Surge Current

    625mA

  • Current - Average Rectified (Io)

    225mA DC

  • Reverse Recovery Time

    50 ns

  • Power Dissipation-Max

    0.225W

  • Capacitance @ Vr, F

    5pF @ 0V 1MHz

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