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  • MMSTA64T146

MMSTA64T146

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Manufacturer No:

MMSTA64T146

Manufacturer:

ROHM Semiconductor

HK JDW NO:

687-MMSTA64T146

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

MMSTA64T146

Description:

MMSTA64T146 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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MMSTA64T146 Overview


In this device, the DC current gain is 20000 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.Keeping the emitter base voltage at 10V can result in a high level of efficiency.As you can see, the part has a transition frequency of 125MHz.In extreme cases, the collector current can be as low as 300mA volts.

MMSTA64T146 Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the emitter base voltage is kept at 10V
a transition frequency of 125MHz

MMSTA64T146 Applications


There are a lot of ROHM Semiconductor MMSTA64T146 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

MMSTA64T146

technical specifications, attributes, parameters and parts with similar specifications to MMSTA64T146.

  • Type
    Parameter
    Select All
  • Continuous Collector Current

    500mA

  • Collector-Base Capacitance-Max

    7pF

  • Radiation Hardening

    No

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Factory Lead Time

    7 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Packaging

    Tape & Reel (TR)

  • Published

    1998

  • Part Status

    Not For New Designs

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • HTS Code

    8541.21.00.75

  • Max Power Dissipation

    200mW

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Operating Temperature (Max)

    150°C

  • Number of Elements

    1

  • Polarity

    PNP

  • Element Configuration

    Single

  • Power Dissipation

    200mW

  • Transistor Application

    AMPLIFIER

  • Gain Bandwidth Product

    125MHz

  • Transistor Type

    PNP - Darlington

  • Collector Emitter Voltage (VCEO)

    30V

  • Max Collector Current

    300mA

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    20000 @ 100mA 5V

  • Current - Collector Cutoff (Max)

    100nA ICBO

  • Collector Emitter Breakdown Voltage

    30V

  • Current - Collector (Ic) (Max)

    300mA

  • Transition Frequency

    125MHz

  • Collector Emitter Saturation Voltage

    1.5V

  • Collector Base Voltage (VCBO)

    30V

  • Emitter Base Voltage (VEBO)

    10V

  • hFE Min

    10000

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