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MBRD660CTT4G

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Manufacturer No:

MBRD660CTT4G

Manufacturer:

ON Semiconductor

HK JDW NO:

598-MBRD660CTT4G

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Datasheet:

MBRD660CTT4G

Description:

MBRD660CTT4G Schottky diode and rectifier 6A 60V

Quantity:

In Stock : 999

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Schottky diode with rectifier 6A 60V

MBRD660CTT4G Overview


A forward voltage of 900mV will enable the device to operate.An output voltage of 3A is the maximum it can handle.Keeping the surge current under 75A and preventing it from exceeding it should be the rule.The device operates when the forward voltage is set to 6A.Parts can be powered by currents of 6A.A reverse voltage peak of 100μA is used to power devices like this one.A semiconductor device's maximum reverse leakage current is 100μA, which is the current created by its reverse bias.

MBRD660CTT4G Features


900mV forward voltage
a maximum output voltage of 3A
a peak voltage of 100μA
a reverse voltage peak of 100μA

MBRD660CTT4G Applications


There are a lot of ON Semiconductor MBRD660CTT4G applications of rectifier diode array.

  • Free wheeling diode in low voltage converters
  • Crowbar applications
  • Battery chargers
  • Rectifiers for UBS
  • Rectifiers in switch mode power supplies (SMPS)
  • General Rectification
  • Rectifier for drives applications



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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

MBRD660CTT4G

technical specifications, attributes, parameters and parts with similar specifications to MBRD660CTT4G.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    8 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 13 hours ago)

  • Packaging

    Cut Tape (CT)

  • Published

    2011

  • Series

    SWITCHMODE™

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Max Operating Temperature

    175°C

  • Min Operating Temperature

    -65°C

  • Length

    6.73mm

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Contact Plating

    Tin

  • Current Rating

    6A

  • Radiation Hardening

    No

  • Number of Pins

    3

  • Additional Feature

    FREE WHEELING DIODE

  • Package / Case

    TO-252-3, DPak (2 Leads + Tab), SC-63

  • REACH SVHC

    No SVHC

  • Height

    2.38mm

  • Width

    6.22mm

  • Mounting Type

    Surface Mount

  • Voltage - Rated DC

    60V

  • HTS Code

    8541.10.00.80

  • JESD-609 Code

    e3

  • Terminal Position

    SINGLE

  • Terminal Form

    GULL WING

  • Base Part Number

    MBRD660CT

  • Pin Count

    3

  • Surface Mount

    YES

  • JESD-30 Code

    R-PSSO-G2

  • Diode Element Material

    SILICON

  • Number of Elements

    2

  • Diode Type

    Schottky

  • Output Current-Max

    3A

  • Application

    FAST RECOVERY POWER

  • Number of Phases

    1

  • Forward Current

    6A

  • Forward Voltage

    900mV

  • Halogen Free

    Halogen Free

  • Max Surge Current

    75A

  • Element Configuration

    Common Cathode

  • Max Reverse Leakage Current

    100μA

  • Speed

    Fast Recovery =< 500ns, > 200mA (Io)

  • Current - Reverse Leakage @ Vr

    100μA @ 60V

  • Voltage - Forward (Vf) (Max) @ If

    700mV @ 3A

  • Operating Temperature - Junction

    -65°C~175°C

  • Max Reverse Voltage (DC)

    60V

  • Average Rectified Current

    3A

  • Peak Reverse Current

    100μA

  • Max Repetitive Reverse Voltage (Vrrm)

    60V

  • Peak Non-Repetitive Surge Current

    75A

  • Diode Configuration

    1 Pair Common Cathode

  • Max Forward Surge Current (Ifsm)

    75A

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