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LET9060C
LET9060C
761-LET9060C
M243
LET9060C datasheet pdf and Transistors - FETs, MOSFETs - RF product details from STMicroelectronics stock available at HK JDW
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Product Details
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LET9060C Description
A lateral field-effect RF power MOSFET with a common source N-channel and enhancement mode is called the LET9060C. It is intended for industrial, commercial, and high gain applications. At frequencies up to 1 GHz, it runs in common source mode at 28 V. The first genuine SMD plastic RF power package, PowerSO-10RF, houses ST's latest LDMOS technology, which has the exceptional gain, linearity, and reliability of LET9060C. The LET9060C is the perfect option for base station applications because to its outstanding linearity performance. The PowerSO-10 plastic package, which aims to provide excellent reliability, is the first high power SMD package to receive ST JEDEC approval. It has good RF capabilities and is simple to assemble. It has been specifically tailored for RF demands.
LET9060C Features
outstanding thermal stability
standardized source configuration
POUT= 60 W with a gain of 17.2 dB at 960 MHz and 28 V.
updated RF plastic packaging
LET9060C Applications
Switching applications
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LET9060C
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