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JANTX2N6352
JANTX2N6352
523-JANTX2N6352
TO-213AA, TO-66-2
JANTX2N6352 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at HK JDW
In Stock : 999
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Product Details
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JANTX2N6352 Overview
This device has a DC current gain of 2000 @ 5A 5V, which is the ratio between the collector current and the base current.This design offers maximum flexibility with a collector emitter saturation voltage of 1.5V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 5mA, 5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.50MHz is present in the transition frequency.When collector current reaches its maximum, it can reach 5A volts.
JANTX2N6352 Features
the DC current gain for this device is 2000 @ 5A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 5mA, 5A
the emitter base voltage is kept at 12V
a transition frequency of 50MHz
JANTX2N6352 Applications
There are a lot of Microsemi Corporation JANTX2N6352 applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
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JANTX2N6352
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