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JANTX2N2904

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Manufacturer No:

JANTX2N2904

Manufacturer:

Microsemi

HK JDW NO:

523-JANTX2N2904

Package:

TO-205AD, TO-39-3 Metal Can

Datasheet:

JANTX2N2904

Description:

JANTX2N2904 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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JANTX2N2904 Overview


This device has a DC current gain of 40 @ 150mA 10V, which is the ratio between the collector current and the base current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1.6V @ 50mA, 500mA.Emitter base voltages of 5V can achieve high levels of efficiency.There is a transition frequency of 200MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.

JANTX2N2904 Features


the DC current gain for this device is 40 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 200MHz

JANTX2N2904 Applications


There are a lot of Microsemi Corporation JANTX2N2904 applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

JANTX2N2904

technical specifications, attributes, parameters and parts with similar specifications to JANTX2N2904.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    36 Weeks

  • Lifecycle Status

    IN PRODUCTION (Last Updated: 4 weeks ago)

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-205AD, TO-39-3 Metal Can

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -65°C~200°C TJ

  • Packaging

    Bulk

  • Published

    2007

  • Series

    Military, MIL-PRF-19500/290

  • JESD-609 Code

    e0

  • Pbfree Code

    no

  • Part Status

    Discontinued

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin/Lead (Sn/Pb)

  • Subcategory

    Other Transistors

  • Max Power Dissipation

    600mW

  • Terminal Position

    BOTTOM

  • Terminal Form

    WIRE

  • Pin Count

    2

  • Qualification Status

    Qualified

  • Number of Elements

    1

  • Configuration

    SINGLE

  • Power Dissipation

    600mW

  • Case Connection

    COLLECTOR

  • Power - Max

    800mW

  • Transistor Application

    SWITCHING

  • Polarity/Channel Type

    PNP

  • Transistor Type

    PNP

  • Collector Emitter Voltage (VCEO)

    40V

  • Max Collector Current

    600mA

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    40 @ 150mA 10V

  • Current - Collector Cutoff (Max)

    1μA

  • Vce Saturation (Max) @ Ib, Ic

    1.6V @ 50mA, 500mA

  • Transition Frequency

    200MHz

  • Collector Base Voltage (VCBO)

    60V

  • Emitter Base Voltage (VEBO)

    5V

  • Turn On Time-Max (ton)

    45ns

  • Radiation Hardening

    No

  • RoHS Status

    Non-RoHS Compliant

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