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JAN2N6353
JAN2N6353
523-JAN2N6353
TO-213AA, TO-66-3
JAN2N6353 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at HK JDW
In Stock : 999
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JAN2N6353 Overview
In this device, the DC current gain is 1000 @ 5A 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.When VCE saturation is 2.5V @ 10mA, 5A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 12V can result in a high level of efficiency.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.
JAN2N6353 Features
the DC current gain for this device is 1000 @ 5A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 10mA, 5A
the emitter base voltage is kept at 12V
a transition frequency of 50MHz
JAN2N6353 Applications
There are a lot of Microsemi Corporation JAN2N6353 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
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JAN2N6353
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