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IRLR3114ZTRPBF

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Manufacturer No:

IRLR3114ZTRPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRLR3114ZTRPBF

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Datasheet:

IRLR3114ZTRPBF

Description:

IRLR3114ZTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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IRLR3114ZTRPBF Description

IRLR3114ZTRPBF MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.  Additionally, this design has a junction operating temperature of 175??C, a fast switching speed, and an improved repetitive avalanche rating. As a result of the combination of IRLR3114ZTRPBF features, this device can be used across a wide range of applications and is extremely effective and reliable.


IRLR3114ZTRPBF Features

  • Advanced Process Technology

  • Ultra Low On-Resistance

  • 175??C Operating Temperature

  • Fast Switching

  • Repetitive Avalanche Allowed up to Tjmax

  • Logic Level


IRLR3114ZTRPBF Applications

  • Motor Drivers

  • Relay Drivers

  • Switching Regulators

  • Switching Converters

  • Uninterrupted Power Supplies

  • Battery Chargers

  • Solar Applications


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EmailEmail for receiving inquiries: jindawei@hkjdwchip.com

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3. RFQ (Request for Quotations)

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4. Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.

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Payment Method

The fee is charged according to the rule of PayPal.
East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRLR3114ZTRPBF

technical specifications, attributes, parameters and parts with similar specifications to IRLR3114ZTRPBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    12 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-252-3, DPak (2 Leads + Tab), SC-63

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2010

  • Series

    HEXFET®

  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Resistance

    4.9MOhm

  • Terminal Finish

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Additional Feature

    AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Time@Peak Reflow Temperature-Max (s)

    30

  • JESD-30 Code

    R-PSSO-G2

  • Number of Elements

    1

  • Power Dissipation-Max

    140W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    140W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    25 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    4.9m Ω @ 42A, 10V

  • Vgs(th) (Max) @ Id

    2.5V @ 100μA

  • Input Capacitance (Ciss) (Max) @ Vds

    3810pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    42A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    56nC @ 4.5V

  • Rise Time

    140ns

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±16V

  • Fall Time (Typ)

    50 ns

  • Turn-Off Delay Time

    33 ns

  • Continuous Drain Current (ID)

    130mA

  • Threshold Voltage

    1V

  • JEDEC-95 Code

    TO-252AA

  • Gate to Source Voltage (Vgs)

    16V

  • Drain Current-Max (Abs) (ID)

    42A

  • Drain to Source Breakdown Voltage

    40V

  • Pulsed Drain Current-Max (IDM)

    500A

  • Avalanche Energy Rating (Eas)

    260 mJ

  • Nominal Vgs

    1 V

  • Height

    2.3876mm

  • Length

    6.7056mm

  • Width

    6.22mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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