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IRLR2908TRLPBF

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Manufacturer No:

IRLR2908TRLPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRLR2908TRLPBF

Package:

TO-252-3, DPak (2 Leads + Tab), SC-63

Datasheet:

IRLR2908TRLPBF

Description:

IRLR2908TRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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IRLR2908TRLPBF Description


IRLR2908TRLPBF belongs to the family of HEXFET? power MOSFETs that are manufactured by Infineon Technologies. Based on the latest processing techniques, it is able to achieve extremely low on-resistance per silicon area. Moreover, it is capable of providing a fast switching speed and improved repetitive avalanche rating. All of these enable the power MOSFET IRLR2908TRLPBF to be efficient and reliable in various applications.



IRLR2908TRLPBF Features


  • Available in the D-Pak package

  • Extremely low on-resistance per silicon area

  • Fast switching speed

  • Improved repetitive avalanche rating

  • Operating junction temperature of +175 °C



IRLR2908TRLPBF Applications


  • Synchronous rectification

  • High-frequency switching applications


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRLR2908TRLPBF

technical specifications, attributes, parameters and parts with similar specifications to IRLR2908TRLPBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    14 Weeks

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-252-3, DPak (2 Leads + Tab), SC-63

  • Surface Mount

    YES

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2003

  • Series

    HEXFET®

  • JESD-609 Code

    e3

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Terminal Finish

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Additional Feature

    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    SINGLE

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Time@Peak Reflow Temperature-Max (s)

    30

  • JESD-30 Code

    R-PSSO-G2

  • Qualification Status

    Not Qualified

  • Number of Elements

    1

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • Power Dissipation-Max

    120W Tc

  • Operating Mode

    ENHANCEMENT MODE

  • Case Connection

    DRAIN

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    28m Ω @ 23A, 10V

  • Vgs(th) (Max) @ Id

    2.5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    1890pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    30A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    33nC @ 4.5V

  • Drain to Source Voltage (Vdss)

    80V

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±16V

  • JEDEC-95 Code

    TO-252AA

  • Drain Current-Max (Abs) (ID)

    30A

  • Drain-source On Resistance-Max

    0.028Ohm

  • Pulsed Drain Current-Max (IDM)

    150A

  • DS Breakdown Voltage-Min

    80V

  • Avalanche Energy Rating (Eas)

    250 mJ

  • RoHS Status

    ROHS3 Compliant

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