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IRL2203NSTRLPBF

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Manufacturer No:

IRL2203NSTRLPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRL2203NSTRLPBF

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Datasheet:

IRL2203NSTRLPBF

Description:

IRL2203NSTRLPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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IRL2203NSTRLPBF Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 290 mJ.The maximum input capacitance of this device is 3290pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.This device conducts a continuous drain current (ID) of 116A, which is the maximum continuous current transistor can conduct.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.There is no drain current on this device since the maximum continuous current it can conduct is 75A.When the device is turned off, a turn-off delay time of 23 ns occurs as the input capacitance charges before drain current conduction commences.A maximum pulsed drain current of 400A is the maximum peak drain current rated for this device.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 3V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

IRL2203NSTRLPBF Features


the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 116A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 400A.
a threshold voltage of 3V

IRL2203NSTRLPBF Applications


There are a lot of Infineon Technologies IRL2203NSTRLPBF applications of single MOSFETs transistors.

  • Motor drives and Uninterruptible Power Supplies
  • Uninterruptible Power Supply
  • Load switching
  • Solar Inverter
  • Motor control
  • DC-to-DC converters
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Consumer Appliances
  • Battery Protection Circuit
  • Lighting, Server, Telecom and UPS.
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRL2203NSTRLPBF

technical specifications, attributes, parameters and parts with similar specifications to IRL2203NSTRLPBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    12 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2010

  • Series

    HEXFET®

  • JESD-609 Code

    e3

  • Part Status

    Not For New Designs

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • Termination

    SMD/SMT

  • ECCN Code

    EAR99

  • Resistance

    7MOhm

  • Terminal Finish

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Additional Feature

    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

  • Subcategory

    FET General Purpose Power

  • Voltage - Rated DC

    30V

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Current Rating

    116A

  • Time@Peak Reflow Temperature-Max (s)

    30

  • JESD-30 Code

    R-PSSO-G2

  • Number of Elements

    1

  • Power Dissipation-Max

    3.8W Ta 180W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    170W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    11 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    7m Ω @ 60A, 10V

  • Vgs(th) (Max) @ Id

    3V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    3290pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    116A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    60nC @ 4.5V

  • Rise Time

    160ns

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±16V

  • Fall Time (Typ)

    66 ns

  • Turn-Off Delay Time

    23 ns

  • Continuous Drain Current (ID)

    116A

  • Threshold Voltage

    3V

  • Gate to Source Voltage (Vgs)

    16V

  • Drain Current-Max (Abs) (ID)

    75A

  • Drain to Source Breakdown Voltage

    30V

  • Pulsed Drain Current-Max (IDM)

    400A

  • Dual Supply Voltage

    30V

  • Avalanche Energy Rating (Eas)

    290 mJ

  • Recovery Time

    84 ns

  • Nominal Vgs

    3 V

  • Height

    4.572mm

  • Length

    10.668mm

  • Width

    9.65mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Contains Lead, Lead Free

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