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  • IRGS4056DPBF

IRGS4056DPBF

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Manufacturer No:

IRGS4056DPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRGS4056DPBF

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Datasheet:

IRGS4056DPBF

Description:

IRGS4056DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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IRGS4056DPBF Description


IRGS4056DPBF is a type of insulated gate bipolar transistor with an ultrafast soft recovery diode manufactured by Infineon Technologies to provide high efficiency in a wide range of applications. Due to its 5μs short circuit SOA and square RBSOA, it is able to provide rugged transient performance. Moreover, excellent current sharing in parallel operation can be delivered due to its positive VCE(ON) temperature coefficient. Low VCE(ON) and switching losses enable it to provide high efficiency in a wide range of switching frequencies. 



IRGS4056DPBF Features


5μs short circuit SOA

Square RBSOA

Positive VCE(ON) temperature coefficient

Low VCE(ON) and switching losses

Package: D2Pak



IRGS4056DPBF Applications


Industrial motor drive

UPS

Solar Inverters

Welding 


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRGS4056DPBF

technical specifications, attributes, parameters and parts with similar specifications to IRGS4056DPBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    13 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

  • Number of Pins

    2

  • Weight

    260.39037mg

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tube

  • Published

    2007

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Subcategory

    Insulated Gate BIP Transistors

  • Max Power Dissipation

    140W

  • Terminal Form

    GULL WING

  • Element Configuration

    Single

  • Input Type

    Standard

  • Power - Max

    140W

  • Polarity/Channel Type

    N-CHANNEL

  • Collector Emitter Voltage (VCEO)

    1.85V

  • Max Collector Current

    24A

  • Reverse Recovery Time

    68 ns

  • Collector Emitter Breakdown Voltage

    600V

  • Collector Emitter Saturation Voltage

    1.55V

  • Test Condition

    400V, 12A, 22 Ω, 15V

  • Vce(on) (Max) @ Vge, Ic

    1.85V @ 15V, 12A

  • IGBT Type

    Trench

  • Gate Charge

    25nC

  • Current - Collector Pulsed (Icm)

    48A

  • Td (on/off) @ 25°C

    31ns/83ns

  • Switching Energy

    75μJ (on), 225μJ (off)

  • Gate-Emitter Voltage-Max

    30V

  • Gate-Emitter Thr Voltage-Max

    6.5V

  • Fall Time-Max (tf)

    31ns

  • Height

    9.65mm

  • Length

    10.67mm

  • Width

    4.83mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    RoHS Compliant

  • Lead Free

    Lead Free

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