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IRG7PH42UDPBF

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Manufacturer No:

IRG7PH42UDPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRG7PH42UDPBF

Package:

TO-247-3

Datasheet:

IRG7PH42UDPBF

Description:

IRG7PH42UDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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IRG7PH42UDPBF Description

IRG7PH42UDPBF is a TO-247-3 packaging insulated gate bipolar transistor with ultrafast soft recovery diode. Because of its low VCE (ON) and low switching losses, the IRG7PH42UDPBF has a high efficiency in a wide range of applications and is suited for a wide range of switching frequencies. It features excellent current sharing in parallel operation and has rugged transient performance for better reliability. Please consult the IRG7PH42UDPBF datasheet for further information.

IRG7PH42UDPBF Features

? Lead-Free
? Square RBSOA
? Low switching losses
? Tight parameter distribution
? 100% of the parts tested for ILM 
? Ultra fast soft recovery co-pak diode
? Low VCE (ON) trench IGBT technology
? Positive VCE (ON) temperature co-efficient

IRG7PH42UDPBF Applications

? U.P.S.
? Welding
? Solar Inverter
? Induction Heating
? Generic Industrial Applications
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRG7PH42UDPBF

technical specifications, attributes, parameters and parts with similar specifications to IRG7PH42UDPBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    16 Weeks

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-247-3

  • Number of Pins

    3

  • Weight

    38.000013g

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tube

  • Published

    2004

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Subcategory

    Insulated Gate BIP Transistors

  • Max Power Dissipation

    320W

  • Number of Elements

    1

  • Rise Time-Max

    41ns

  • Element Configuration

    Single

  • Power Dissipation

    320W

  • Case Connection

    COLLECTOR

  • Input Type

    Standard

  • Turn On Delay Time

    25 ns

  • Transistor Application

    POWER CONTROL

  • Polarity/Channel Type

    N-CHANNEL

  • Turn-Off Delay Time

    229 ns

  • Collector Emitter Voltage (VCEO)

    2V

  • Max Collector Current

    85A

  • Reverse Recovery Time

    153 ns

  • JEDEC-95 Code

    TO-247AC

  • Collector Emitter Breakdown Voltage

    1.2kV

  • Voltage - Collector Emitter Breakdown (Max)

    1200V

  • Collector Emitter Saturation Voltage

    1.7V

  • Turn On Time

    51 ns

  • Test Condition

    600V, 30A, 10 Ω, 15V

  • Vce(on) (Max) @ Vge, Ic

    2V @ 15V, 30A

  • Turn Off Time-Nom (toff)

    444 ns

  • IGBT Type

    Trench

  • Gate Charge

    157nC

  • Current - Collector Pulsed (Icm)

    90A

  • Td (on/off) @ 25°C

    25ns/229ns

  • Switching Energy

    2.11mJ (on), 1.18mJ (off)

  • Gate-Emitter Thr Voltage-Max

    6V

  • Fall Time-Max (tf)

    86ns

  • Height

    20.7mm

  • Length

    15.87mm

  • Width

    5.3086mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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