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  • IRG4PC30KDPBF

IRG4PC30KDPBF

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Manufacturer No:

IRG4PC30KDPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRG4PC30KDPBF

Package:

TO-247-3

Datasheet:

IRG4PC30KDPBF

Description:

IRG4PC30KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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IRG4PC30KDPBF Description


IRG4PC30KDPBF belongs to the family of short circuit rated ultrafast IGBTs that are manufactured by Infineon Technologies to minimize switching losses and conduction losses. IGBT IRG4PC30KDPBF is co-packaged with HEXFRED? ultrafast, ultrasoft recovery antiparallel diodes to reduce noise, EMI, and switching losses. It combines the high input impedance of MOSFETs and the low on-state voltage drop of GTRs. Compared with the previous generation, it is characterized by tighter parameter distribution and higher efficiency.



IRG4PC30KDPBF Features


  • Tighter parameter distribution 

  • Higher efficiency

  • Low conduction losses

  • High switching speed

  • Available in the TO-247AC package



IRG4PC30KDPBF Applications


  • Rail transit

  • Smart grid

  • Aerospace

  • Electric vehicles 

  • New energy equipment


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRG4PC30KDPBF

technical specifications, attributes, parameters and parts with similar specifications to IRG4PC30KDPBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    14 Weeks

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-247-3

  • Number of Pins

    3

  • Weight

    38.000013g

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Bulk

  • Published

    2000

  • Part Status

    Last Time Buy

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Additional Feature

    LOW CONDUCTION LOSS

  • Subcategory

    Insulated Gate BIP Transistors

  • Voltage - Rated DC

    600V

  • Max Power Dissipation

    100W

  • Current Rating

    28A

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    100W

  • Case Connection

    COLLECTOR

  • Input Type

    Standard

  • Turn On Delay Time

    60 ns

  • Transistor Application

    MOTOR CONTROL

  • Rise Time

    42ns

  • Polarity/Channel Type

    N-CHANNEL

  • Turn-Off Delay Time

    160 ns

  • Collector Emitter Voltage (VCEO)

    2.7V

  • Max Collector Current

    28A

  • Reverse Recovery Time

    42 ns

  • JEDEC-95 Code

    TO-247AC

  • Collector Emitter Breakdown Voltage

    600V

  • Collector Emitter Saturation Voltage

    2.21V

  • Input Capacitance

    920pF

  • Turn On Time

    100 ns

  • Test Condition

    480V, 16A, 23 Ω, 15V

  • Vce(on) (Max) @ Vge, Ic

    2.7V @ 15V, 16A

  • Turn Off Time-Nom (toff)

    370 ns

  • Gate Charge

    67nC

  • Current - Collector Pulsed (Icm)

    58A

  • Td (on/off) @ 25°C

    60ns/160ns

  • Switching Energy

    600μJ (on), 580μJ (off)

  • Gate-Emitter Voltage-Max

    20V

  • Gate-Emitter Thr Voltage-Max

    6V

  • Fall Time-Max (tf)

    120ns

  • Height

    20.3mm

  • Length

    15.875mm

  • Width

    5.3mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Contains Lead, Lead Free

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