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  • IRFZ24NPBF

IRFZ24NPBF

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Manufacturer No:

IRFZ24NPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRFZ24NPBF

Package:

TO-220-3

Datasheet:

IRFZ24NPBF

Description:

IRFZ24NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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IRFZ24NPBF Description


International Rectifier's Fifth Generation HEXFET power MOSFETs use innovative processing techniques to provide the lowest achievable on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET power MOSFETs are known for, gives the designer a highly efficient device that can be used in a wide range of applications.



IRFZ24NPBF Features


  • Advanced process technology

  • Dynamic dv/dt rating

  • Fast switching

  • Fully avalanche rated

  • Planar cell structure for wide SOA

  • Product qualification according to JEDEC standard

  • High-current rating

  • Increased ruggedness

  • High performance in low frequency applications

  • High current capability



IRFZ24NPBF Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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4. Shipping Cost

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Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.

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Payment Method

The fee is charged according to the rule of PayPal.
East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRFZ24NPBF

technical specifications, attributes, parameters and parts with similar specifications to IRFZ24NPBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    12 Weeks

  • Mount

    Through Hole

  • Packaging

    Tube

  • Published

    1999

  • Series

    HEXFET®

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • Termination

    Through Hole

  • ECCN Code

    EAR99

  • Length

    10.5156mm

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Contact Plating

    Tin

  • Current Rating

    17A

  • Radiation Hardening

    No

  • Number of Pins

    3

  • Additional Feature

    AVALANCHE RATED

  • Package / Case

    TO-220-3

  • REACH SVHC

    No SVHC

  • Lead Pitch

    2.54mm

  • Height

    19.8mm

  • Width

    4.69mm

  • Resistance

    70mOhm

  • Mounting Type

    Through Hole

  • Operating Temperature

    -55°C~175°C TJ

  • Voltage - Rated DC

    55V

  • Technology

    MOSFET (Metal Oxide)

  • Operating Mode

    ENHANCEMENT MODE

  • Number of Channels

    1

  • Subcategory

    FET General Purpose Power

  • Number of Elements

    1

  • JEDEC-95 Code

    TO-220AB

  • Case Connection

    DRAIN

  • Element Configuration

    Single

  • Power Dissipation

    45W

  • Turn On Delay Time

    4.9 ns

  • Threshold Voltage

    2V

  • Power Dissipation-Max

    45W Tc

  • Continuous Drain Current (ID)

    17A

  • Max Junction Temperature (Tj)

    175°C

  • Transistor Application

    SWITCHING

  • Turn-Off Delay Time

    19 ns

  • Transistor Element Material

    SILICON

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    70m Ω @ 10A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    370pF @ 25V

  • Gate Charge (Qg) (Max) @ Vgs

    20nC @ 10V

  • Rise Time

    34ns

  • Fall Time (Typ)

    27 ns

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    55V

  • Dual Supply Voltage

    55V

  • Nominal Vgs

    4 V

  • Current - Continuous Drain (Id) @ 25°C

    17A Tc

  • Pulsed Drain Current-Max (IDM)

    68A

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

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