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IRFI1310NPBF
IRFI1310NPBF
376-IRFI1310NPBF
TO-220-3 Full Pack
IRFI1310NPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW
In Stock : 999
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Product Details
Purchasing and Inquiry
IRFI1310NPBF Description
International Rectifier's Fifth Generation HEXFETs use cutting-edge processing methods to achieve exceptionally low onresistance per silicon area. This feature, along with the HEXFET Power MOSFETs' well-known fast switching speed and ruggedized device design, gives the designer an incredibly efficient and dependable device for usage in a range of applications.
In commercial and industrial applications, the TO-220 Fullpak eliminates the need for additional insulating gear. The molding compound utilized offers a strong thermal isolation between the tab and external heatsink as well as a low thermal resistance. This isolation is comparable to employing a mica barrier with a conventional TO-220 product that is 100 microns thick. One clip or one screw can be used to attach the Fullpak to a heatsink.
IRFI1310NPBF Features
Advanced Process Technology
Isolated Package
High Voltage Isolation = 2.5KVRMS ?
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
Lead-Free
IRFI1310NPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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IRFI1310NPBF
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