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Home Home Discrete Semiconductors Single MOSFETs Transistors IRFH9310TRPBF
IRFH9310TRPBF
  • IRFH9310TRPBF
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IRFH9310TRPBF

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Manufacturer No:

IRFH9310TRPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRFH9310TRPBF

Package:

8-PowerVDFN

Datasheet:

IRFH9310TRPBF

Description:

IRFH9310TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

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In Stock : 999

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Product Details

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IRFH9310TRPBF   Description

 


  Power MOSFET IRFH9310TRPBF is a special type of metal oxide semiconductor field effect transistor. It is specially designed to deal with high-level power. The power MOSFET adopts V-shaped structure. Therefore, it is also known as VmurMOSFET.VFET. The symbols for N-channel and P-channel power MOSFET are shown in the following figure.

 

IRFH9310TRPBF    Features


 Low Rpson (≤ 4.6mΩ)

 Industry-Standard PQFN Package

 RoHS Compliant Containing no Lead no Bromide and no Halogen

Lower Conduction Losses

 Multi-Vendor Compatibility

Environmentally Friendlier

 

IRFH9310TRPBF    Applications


N-channel

P-channel power MOSFET

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4. Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.

Purchasing and Inquiry

Payment Method

 The fee is charged according to the rule of PayPal.
East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

 DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRFH9310TRPBF

technical specifications, attributes, parameters and parts with similar specifications to IRFH9310TRPBF.

  • Type
    Parameter
    Select All

  • Factory Lead Time

    12 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    8-PowerVDFN

  • Number of Pins

    8

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2010

  • Series

    HEXFET®

  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    2 (1 Year)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Matte Tin (Sn)

  • Subcategory

    Other Transistors

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • Peak Reflow Temperature (Cel)

    260

  • Time@Peak Reflow Temperature-Max (s)

    30

  • JESD-30 Code

    R-PDSO-N3

  • Number of Elements

    1

  • Power Dissipation-Max

    3.1W Ta

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    3.1W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    25 ns

  • FET Type

    P-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    4.6m Ω @ 21A, 10V

  • Vgs(th) (Max) @ Id

    2.4V @ 100μA

  • Input Capacitance (Ciss) (Max) @ Vds

    5250pF @ 15V

  • Current - Continuous Drain (Id) @ 25°C

    21A Ta 40A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    58nC @ 4.5V

  • Rise Time

    47ns

  • Drain to Source Voltage (Vdss)

    30V

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    70 ns

  • Turn-Off Delay Time

    65 ns

  • Continuous Drain Current (ID)

    21A

  • Threshold Voltage

    -1.9V

  • Gate to Source Voltage (Vgs)

    20V

  • Drain Current-Max (Abs) (ID)

    40A

  • Drain-source On Resistance-Max

    0.0046Ohm

  • Drain to Source Breakdown Voltage

    -30V

  • Nominal Vgs

    -1.9 V

  • Height

    950μm

  • Length

    6mm

  • Width

    5mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

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