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IRFH8202TRPBF
IRFH8202TRPBF
376-IRFH8202TRPBF
8-PowerTDFN
IRFH8202TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW
In Stock : 999
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IRFH8202TRPBF Description
Infineon Technologies' CoolMOSTM 7th generation platform is a ground-breaking technology for high-voltage power MOSFETs based on the superjunction (SJ) principle. The CoolMOSTM P7 series takes the place of the 600V CoolMOSTM P6 series. Reduced ringing, superior body diode endurance against severe commutation, and excellent ESD performance combine the advantages of a rapid switching SJ MOSFET with amazing ease of use. Switching applications are more efficient, smaller, and cooler due to exceptionally low switching and conduction losses.
IRFH8202TRPBF Features
RDSon (vf05 m2) is low.
PCB Thermal Resistance (vO.8°C/W) is Low.
(v09 mm) Low Profile Standard Pinout in the Industry
Compatible with Current Surface Mounting Methodologies
Compliant with RoHS MSL1 is an industrial qualification that has no lead, bromide, or halogen.
IRFH8202TRPBF Applications
MOSFET OR-ing for Bus in-Rush Current at 12V (typical)
DC powered by a battery MOSFET MOSFET MOSFET MOSFET MOSFET MOSFET MOSFET
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DHL(www.dhl.com) From $40.00 basic shipping fee depend on zone and country. |
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IRFH8202TRPBF
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