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IRFB5615PBF
IRFB5615PBF
376-IRFB5615PBF
TO-220-3
IRFB5615PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW
In Stock : 999
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IRFB5615PBF Description
For use in Class-D audio amplifier applications, this Digital Audio MOSFET was created. This MOSFET achieves low on-resistance per silicon area by utilizing the most recent processing techniques. In addition, internal Gate resistance, body-diode reverse recovery, and Gate charge are adjusted to enhance crucial Class-D audio amplifier performance elements like efficiency, THD, and EMI. This MOSFET also has repeating avalanche capabilities and an operating junction temperature of 175°C. These characteristics work together to make this MOSFET an extremely effective, durable, and dependable component for ClassD audio amplifier applications.
IRFB5615PBF Features
Key Parameters Optimized for Class-D Audio Amplifier Applications
Low RDSON for Improved Efficiency
Low QG and QSW for Better THD and Improved Efficiency
Low QRR for Better THD and Lower EMI
175°C Operating Junction Temperature for Ruggedness
Can Deliver up to 300W per Channel into 4? Load in Half-Bridge Configuration Amplifier
IRFB5615PBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
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IRFB5615PBF
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