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  • IRFB4710PBF

IRFB4710PBF

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Manufacturer No:

IRFB4710PBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRFB4710PBF

Package:

TO-220-3

Datasheet:

IRFB4710PBF

Description:

IRFB4710PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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IRFB4710PBF Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 6160pF @ 25V.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 75A amps.Drain-source breakdown voltage is?the VDS at which a specified value of ID flows, with VGS=100V.?And this device has 100V drain to source breakdown voltage.As a result of its turn-off delay time, which is 41 ns, the device has taken time to charge its input capacitance before drain current conduction begins.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 35 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Threshold voltage is?the point at which an electrical device is set to activate any one of its operations, and this transistor has 5.5V threshold voltage. In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRFB4710PBF Features


a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 41 ns
a threshold voltage of 5.5V

IRFB4710PBF Applications


There are a lot of Infineon Technologies IRFB4710PBF applications of single MOSFETs transistors.

  • Solar Inverter
  • General Purpose Interfacing Switch
  • Motor drives and Uninterruptible Power Supplies
  • Consumer Appliances
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Telecom 1 Sever Power Supplies
  • Server power supplies
  • DC-to-DC converters
  • Industrial Power Supplies
  • Power Tools
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRFB4710PBF

technical specifications, attributes, parameters and parts with similar specifications to IRFB4710PBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    12 Weeks

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tube

  • Published

    2001

  • Series

    HEXFET®

  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • Termination

    Through Hole

  • ECCN Code

    EAR99

  • Resistance

    14mOhm

  • Terminal Finish

    MATTE TIN OVER NICKEL

  • Subcategory

    FET General Purpose Power

  • Voltage - Rated DC

    100V

  • Technology

    MOSFET (Metal Oxide)

  • Peak Reflow Temperature (Cel)

    250

  • Current Rating

    75A

  • Time@Peak Reflow Temperature-Max (s)

    30

  • Number of Elements

    1

  • Power Dissipation-Max

    3.8W Ta 200W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    200W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    35 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    14m Ω @ 45A, 10V

  • Vgs(th) (Max) @ Id

    5.5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    6160pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    75A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    170nC @ 10V

  • Rise Time

    130ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    38 ns

  • Turn-Off Delay Time

    41 ns

  • Continuous Drain Current (ID)

    75A

  • Threshold Voltage

    5.5V

  • JEDEC-95 Code

    TO-220AB

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    100V

  • Dual Supply Voltage

    100V

  • Recovery Time

    110 ns

  • Nominal Vgs

    5.5 V

  • Height

    8.77mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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