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  • IRFB4229PBF

IRFB4229PBF

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Manufacturer No:

IRFB4229PBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRFB4229PBF

Package:

TO-220-3

Datasheet:

IRFB4229PBF

Description:

IRFB4229PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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IRFB4229PBF Description

The IRFB4229PBF is a HEXFET? single N-channel Power MOSFET designed for plasma display panel sustain, energy recovery, and pass switch applications. It makes use of cutting-edge processing techniques to provide low ON-resistance per silicon area and low EPULSE. The operational junction temperature of this MOSFET is 175°C, and it has a high repeated peak current capability. This MOSFET's combination of characteristics makes it a very efficient, durable, and dependable semiconductor for PDP driving applications.


IRFB4229PBF Features

  • Advanced Process Technology

  • Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications

  • Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery, and Pass Switch Applications

  • Low QG for Fast Response

  • High Repetitive Peak Current Capability for Reliable Operation

  • Short Fall & Rise Times for Fast Switching

  • 175°C Operating Junction Temperature for Improved Ruggedness

  • Repetitive Avalanche Capability for Robustness and Reliability

  • Class-D Audio Amplifier 300W-500W (Half-bridge)

  • Advanced process technology

  • Low Qg for fast response

  • High repetitive peak current capability for reliable operation

  • Short fall and rise times for fast switching

  • Repetitive avalanche capability for robustness and reliability


IRFB4229PBF Applications

  • Audio

  • Consumer Electronics

  • Power Management


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EmailEmail for receiving inquiries: jindawei@hkjdwchip.com

2. Means of Payment

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4. Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.

Purchasing and Inquiry

Payment Method

The fee is charged according to the rule of PayPal.
East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRFB4229PBF

technical specifications, attributes, parameters and parts with similar specifications to IRFB4229PBF.

  • Type
    Parameter
    Select All
  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Factory Lead Time

    12 Weeks

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -40°C~175°C TJ

  • Packaging

    Tube

  • Published

    2007

  • Series

    HEXFET®

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • Termination

    Through Hole

  • ECCN Code

    EAR99

  • Resistance

    46MOhm

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Number of Elements

    1

  • Power Dissipation-Max

    330W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    330mW

  • Case Connection

    DRAIN

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    46m Ω @ 26A, 10V

  • Vgs(th) (Max) @ Id

    5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    4560pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    46A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    110nC @ 10V

  • Rise Time

    31ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±30V

  • Fall Time (Typ)

    21 ns

  • Turn-Off Delay Time

    30 ns

  • Continuous Drain Current (ID)

    46A

  • Threshold Voltage

    5V

  • JEDEC-95 Code

    TO-220AB

  • Gate to Source Voltage (Vgs)

    30V

  • Drain to Source Breakdown Voltage

    250V

  • Dual Supply Voltage

    250V

  • Recovery Time

    290 ns

  • Nominal Vgs

    5 V

  • Height

    16.51mm

  • Length

    10.6426mm

  • Width

    4.82mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

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