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IRFB4229PBF
IRFB4229PBF
376-IRFB4229PBF
TO-220-3
IRFB4229PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW
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IRFB4229PBF Description
The IRFB4229PBF is a HEXFET? single N-channel Power MOSFET designed for plasma display panel sustain, energy recovery, and pass switch applications. It makes use of cutting-edge processing techniques to provide low ON-resistance per silicon area and low EPULSE. The operational junction temperature of this MOSFET is 175°C, and it has a high repeated peak current capability. This MOSFET's combination of characteristics makes it a very efficient, durable, and dependable semiconductor for PDP driving applications.
IRFB4229PBF Features
Advanced Process Technology
Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications
Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain, Energy Recovery, and Pass Switch Applications
Low QG for Fast Response
High Repetitive Peak Current Capability for Reliable Operation
Short Fall & Rise Times for Fast Switching
175°C Operating Junction Temperature for Improved Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
Class-D Audio Amplifier 300W-500W (Half-bridge)
Advanced process technology
Low Qg for fast response
High repetitive peak current capability for reliable operation
Short fall and rise times for fast switching
Repetitive avalanche capability for robustness and reliability
IRFB4229PBF Applications
Audio
Consumer Electronics
Power Management
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IRFB4229PBF
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