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IRFB41N15DPBF

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Manufacturer No:

IRFB41N15DPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRFB41N15DPBF

Package:

TO-220-3

Datasheet:

IRFB41N15DPBF

Description:

IRFB41N15DPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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IRFB41N15DPBF Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 470 mJ.The maximum input capacitance of this device is 2520pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 41A.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 25 ns.A turn-on delay time of 16 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.The gate-source voltage, VGS, of a FET transistor is?the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.In this case, the threshold voltage of the transistor is 5.5V, which means that it will not activate any of its functions when its threshold voltage reaches 5.5V.This device reduces its overall power consumption by using drive voltage (10V).

IRFB41N15DPBF Features


the avalanche energy rating (Eas) is 470 mJ
a continuous drain current (ID) of 41A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 25 ns
a threshold voltage of 5.5V

IRFB41N15DPBF Applications


There are a lot of Infineon Technologies IRFB41N15DPBF applications of single MOSFETs transistors.

  • LCD/LED/ PDP TV Lighting
  • AC-DC Power Supply
  • Consumer Appliances
  • PFC stages, hard switching PWM stages and resonant switching
  • LCD/LED TV
  • Solar Inverter
  • DC/DC converters
  • General Purpose Interfacing Switch
  • Motor Drives and Uninterruptible Power Supples
  • Power Tools
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRFB41N15DPBF

technical specifications, attributes, parameters and parts with similar specifications to IRFB41N15DPBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    14 Weeks

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tube

  • Published

    2003

  • Series

    HEXFET®

  • JESD-609 Code

    e3

  • Part Status

    Not For New Designs

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • Termination

    Through Hole

  • ECCN Code

    EAR99

  • Terminal Finish

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Additional Feature

    AVALANCHE RATED

  • Subcategory

    FET General Purpose Power

  • Voltage - Rated DC

    150V

  • Technology

    MOSFET (Metal Oxide)

  • Current Rating

    41A

  • Number of Elements

    1

  • Power Dissipation-Max

    200W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    200W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    16 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    45m Ω @ 25A, 10V

  • Vgs(th) (Max) @ Id

    5.5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    2520pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    41A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    110nC @ 10V

  • Rise Time

    63ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±30V

  • Fall Time (Typ)

    14 ns

  • Turn-Off Delay Time

    25 ns

  • Continuous Drain Current (ID)

    41A

  • Threshold Voltage

    5.5V

  • JEDEC-95 Code

    TO-220AB

  • Gate to Source Voltage (Vgs)

    30V

  • Drain-source On Resistance-Max

    0.045Ohm

  • Drain to Source Breakdown Voltage

    150V

  • Dual Supply Voltage

    150V

  • Avalanche Energy Rating (Eas)

    470 mJ

  • Recovery Time

    260 ns

  • Nominal Vgs

    5.5 V

  • Height

    8.763mm

  • Length

    10.5156mm

  • Width

    4.69mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Contains Lead, Lead Free

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