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IRFB3206GPBF

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Manufacturer No:

IRFB3206GPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRFB3206GPBF

Package:

TO-220-3

Datasheet:

IRFB3206GPBF

Description:

IRFB3206GPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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IRFB3206GPBF    Description


Alex Lidow co-invented the HexFET, a hexagonal type of Power MOSFET, at Stanford University in 1977, along with Tom Herman. The HexFET was commercialized by International Rectifier in 1978.

 

IRFB3206GPBF     Applications


High Efficiency Synchronous Rectification in SMPS

Uninterruptible Power Supply

High Speed Power Switching

Hard Switched and High Frequency Circuits

 

IRFB3206GPBF     Features


 Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

 Fully Characterized Capacitance and Avalanche

 SOA

 Enhanced body diode dV/dt and dI/dt Capability

Lead-Free

Halogen-Free

 


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRFB3206GPBF

technical specifications, attributes, parameters and parts with similar specifications to IRFB3206GPBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    13 Weeks

  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-220-3

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tube

  • Published

    2009

  • Series

    HEXFET®

  • Part Status

    Not For New Designs

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Resistance

    3MOhm

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Number of Elements

    1

  • Power Dissipation-Max

    300W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    300W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    19 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    3m Ω @ 75A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 150μA

  • Input Capacitance (Ciss) (Max) @ Vds

    6540pF @ 50V

  • Current - Continuous Drain (Id) @ 25°C

    120A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    170nC @ 10V

  • Rise Time

    82ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    83 ns

  • Turn-Off Delay Time

    55 ns

  • Continuous Drain Current (ID)

    210A

  • JEDEC-95 Code

    TO-220AB

  • Gate to Source Voltage (Vgs)

    20V

  • Drain Current-Max (Abs) (ID)

    120A

  • Drain to Source Breakdown Voltage

    60V

  • Pulsed Drain Current-Max (IDM)

    840A

  • Avalanche Energy Rating (Eas)

    170 mJ

  • Height

    16.51mm

  • Length

    10.668mm

  • Width

    4.826mm

  • Radiation Hardening

    No

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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