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Home Home Discrete Semiconductors Single MOSFETs Transistors IRF8707GPBF
IRF8707GPBF
  • IRF8707GPBF
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IRF8707GPBF

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Manufacturer No:

IRF8707GPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRF8707GPBF

Package:

8-SOIC (0.154, 3.90mm Width)

Datasheet:

IRF8707GPBF

Description:

IRF8707GPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

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In Stock : 999

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Product Details

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IRF8707GPBF Description

The IRF8707GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry-standard SO-8 package. The IRF8707GPbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high-efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications


IRF8707GPBF Features

Very Low Gate Charge

Very Low RDS(on) at 4.5V VGS

Ultra-Low Gate Impedance

Fully Characterized Avalanche Voltage

and Current

20V VGS Max. Gate Rating

100% tested for Rg

Lead-Free

Halogen-Free


IRF8707GPBF Applications

Control MOSFET of Sync-Buck

Converters used for Notebook

Processor Power

Control MOSFET for Isolated

DC-DC Converters in Networking

Systems


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Payment Method

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East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

 DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRF8707GPBF

technical specifications, attributes, parameters and parts with similar specifications to IRF8707GPBF.

  • Type
    Parameter
    Select All

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    8-SOIC (0.154, 3.90mm Width)

  • Number of Pins

    8

  • Supplier Device Package

    8-SO

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tube

  • Published

    2008

  • Series

    HEXFET®

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Max Operating Temperature

    150°C

  • Min Operating Temperature

    -55°C

  • Technology

    MOSFET (Metal Oxide)

  • Number of Elements

    1

  • Power Dissipation-Max

    2.5W Ta

  • Power Dissipation

    2.5W

  • Turn On Delay Time

    6.7 ns

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    11.9mOhm @ 11A, 10V

  • Vgs(th) (Max) @ Id

    2.35V @ 25μA

  • Input Capacitance (Ciss) (Max) @ Vds

    760pF @ 15V

  • Current - Continuous Drain (Id) @ 25°C

    11A Ta

  • Gate Charge (Qg) (Max) @ Vgs

    9.3nC @ 4.5V

  • Rise Time

    7.9ns

  • Drain to Source Voltage (Vdss)

    30V

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    4.4 ns

  • Turn-Off Delay Time

    7.3 ns

  • Continuous Drain Current (ID)

    11mA

  • Threshold Voltage

    1.8V

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    30V

  • Input Capacitance

    760pF

  • Drain to Source Resistance

    17.5mOhm

  • Rds On Max

    11.9 mΩ

  • Nominal Vgs

    1.8 V

  • Height

    1.4986mm

  • Length

    4.9784mm

  • Width

    3.9878mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    RoHS Compliant

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