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Home Home Discrete Semiconductors Single MOSFETs Transistors IRF7455
IRF7455
  • IRF7455
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IRF7455

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Manufacturer No:

IRF7455

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRF7455

Package:

8-SOIC (0.154, 3.90mm Width)

Datasheet:

IRF7455

Description:

IRF7455 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

Add to RFQ list

In Stock : 999

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4. Shipping Cost

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Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.

Purchasing and Inquiry

Payment Method

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East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

 DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRF7455

technical specifications, attributes, parameters and parts with similar specifications to IRF7455.

  • Type
    Parameter
    Select All

  • Mounting Type

    Surface Mount

  • Package / Case

    8-SOIC (0.154, 3.90mm Width)

  • Surface Mount

    YES

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tube

  • Published

    2004

  • Series

    HEXFET®

  • JESD-609 Code

    e3

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    8

  • ECCN Code

    EAR99

  • Terminal Finish

    Matte Tin (Sn)

  • Additional Feature

    AVALANCHE RATED

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

  • JESD-30 Code

    R-PDSO-G8

  • Qualification Status

    Not Qualified

  • Number of Elements

    1

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • Power Dissipation-Max

    2.5W Ta

  • Operating Mode

    ENHANCEMENT MODE

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    7.5m Ω @ 15A, 10V

  • Vgs(th) (Max) @ Id

    2V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    3480pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    15A Ta

  • Gate Charge (Qg) (Max) @ Vgs

    56nC @ 5V

  • Drain to Source Voltage (Vdss)

    30V

  • Drive Voltage (Max Rds On,Min Rds On)

    2.8V 10V

  • Vgs (Max)

    ±12V

  • JEDEC-95 Code

    MS-012AA

  • Drain Current-Max (Abs) (ID)

    15A

  • Drain-source On Resistance-Max

    0.0075Ohm

  • Pulsed Drain Current-Max (IDM)

    120A

  • DS Breakdown Voltage-Min

    30V

  • Avalanche Energy Rating (Eas)

    200 mJ

  • RoHS Status

    Non-RoHS Compliant

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IRF7455 Related Categories

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