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  • IRF6643TRPBF

IRF6643TRPBF

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Manufacturer No:

IRF6643TRPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRF6643TRPBF

Package:

DirectFET™ Isometric MZ

Datasheet:

IRF6643TRPBF

Description:

IRF6643TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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IRF6643TRPBF    Description


  This digital audio MOSFET IRF6643TRPBF is designed for Class D audio amplifier applications. The MOSFET uses the latest technology to achieve a low on-resistance per silicon area. In addition, gate charge, body diode reverse recovery and internal gate resistance are optimized to improve the key performance factors of Class D audio amplifier, such as efficiency, THD and EMI. IRF6643PbF devices are packaged with Direct FET technology. Compared with traditional wire-bonded SOIC packaging, Direct FET packaging technology provides lower parasitic inductance and resistance. Lower inductors improve EMI performance by reducing the voltage ringing associated with fast current transients. If you follow the AN-1035 application instructions on manufacturing methods and processes, the DirectFET package is compatible with existing layout geometry used in power applications, printed circuit board assembly equipment and gas phase, infrared or convection welding technologies. The DirectFET package also allows double-sided cooling to maximize the heat transfer of the power system, thereby increasing thermal resistance and power consumption. The combination of these features makes the MOSFET an efficient, rugged and reliable device for Class D audio amplifier applications.



IRF6643TRPBF     Features


? Latest MOSFET silicon technology

? Key parameters optimized for Class-D audio amplifier

applications

? Low RDS(on) for improved efficiency

? Low Qg for better THD and improved efficiency

? Low Qrr for better THD and lower EMI

? Low package stray inductance for reduced ringing and lower

EMI

? Can deliver up to 200 W per channel into 8Ω load in half-bridge

configuration amplifier

? Dual sided cooling compatible

? Compatible with existing surface mount technologies

? RoHS compliant, halogen-free

? Lead-free (qualified up to 260°C reflow)

 


 

 IRF6643TRPBF Applications

Class D audio amplifier



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EmailEmail for receiving inquiries: jindawei@hkjdwchip.com

2. Means of Payment

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3. RFQ (Request for Quotations)

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4. Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.

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Payment Method

The fee is charged according to the rule of PayPal.
East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRF6643TRPBF

technical specifications, attributes, parameters and parts with similar specifications to IRF6643TRPBF.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    12 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    DirectFET™ Isometric MZ

  • Number of Pins

    5

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -40°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2006

  • Series

    HEXFET®

  • JESD-609 Code

    e1

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Subcategory

    FET General Purpose Power

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    BOTTOM

  • Peak Reflow Temperature (Cel)

    260

  • JESD-30 Code

    R-XBCC-N3

  • Number of Elements

    1

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • Power Dissipation-Max

    2.8W Ta 89W Tc

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    89W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    9.2 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    34.5m Ω @ 7.6A, 10V

  • Vgs(th) (Max) @ Id

    4.9V @ 150μA

  • Input Capacitance (Ciss) (Max) @ Vds

    2340pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    6.2A Ta 35A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    55nC @ 10V

  • Rise Time

    5ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    4.4 ns

  • Turn-Off Delay Time

    13 ns

  • Continuous Drain Current (ID)

    6.2A

  • Threshold Voltage

    4V

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    150V

  • Pulsed Drain Current-Max (IDM)

    76A

  • Height

    508μm

  • Length

    6.35mm

  • Width

    5.0546mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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