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  • IRF1404SPBF

IRF1404SPBF

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Manufacturer No:

IRF1404SPBF

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IRF1404SPBF

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Datasheet:

IRF1404SPBF

Description:

IRF1404SPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IRF1404SPBF

technical specifications, attributes, parameters and parts with similar specifications to IRF1404SPBF.

  • Type
    Parameter
    Select All
  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tube

  • Published

    2001

  • Series

    HEXFET®

  • JESD-609 Code

    e3

  • Part Status

    Discontinued

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Resistance

    4mOhm

  • Additional Feature

    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

  • Subcategory

    FET General Purpose Power

  • Voltage - Rated DC

    40V

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Current Rating

    162A

  • Time@Peak Reflow Temperature-Max (s)

    30

  • JESD-30 Code

    R-PSSO-G2

  • Number of Elements

    1

  • Power Dissipation-Max

    3.8W Ta 200W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    200W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    17 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    4m Ω @ 95A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    7360pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    162A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    200nC @ 10V

  • Rise Time

    140ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    26 ns

  • Turn-Off Delay Time

    72 ns

  • Continuous Drain Current (ID)

    162A

  • Threshold Voltage

    4V

  • Gate to Source Voltage (Vgs)

    20V

  • Drain Current-Max (Abs) (ID)

    75A

  • Drain to Source Breakdown Voltage

    40V

  • Pulsed Drain Current-Max (IDM)

    650A

  • Dual Supply Voltage

    40V

  • Recovery Time

    110 ns

  • Nominal Vgs

    4 V

  • Height

    4.83mm

  • Length

    10.67mm

  • Width

    9.65mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Contact Plating

    Tin

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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