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IPP040N06N3GXKSA1
IPP040N06N3GXKSA1
376-IPP040N06N3GXKSA1
TO-220-3
IPP040N06N3GXKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW
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IPP040N06N3GXKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 165 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 11000pF @ 30V.The drain current is?the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 90A. Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 40 ns.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 30 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.As it is powered by 60V, it can support the maximum dual supply voltage.Using drive voltage (10V), this device helps reduce its power consumption.
IPP040N06N3GXKSA1 Features
the avalanche energy rating (Eas) is 165 mJ
a continuous drain current (ID) of 90A
the turn-off delay time is 40 ns
IPP040N06N3GXKSA1 Applications
There are a lot of Infineon Technologies IPP040N06N3GXKSA1 applications of single MOSFETs transistors.
- Micro Solar Inverter
- Server power supplies
- Motor control
- Lighting, Server, Telecom and UPS.
- Motor drives and Uninterruptible Power Supplies
- LCD/LED/ PDP TV Lighting
- PFC stages, hard switching PWM stages and resonant switching
- Industrial Power Supplies
- DC-to-DC converters
- Synchronous Rectification for ATX 1 Server I Telecom PSU
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IPP040N06N3GXKSA1
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