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IPD30N03S2L10ATMA1
IPD30N03S2L10ATMA1
376-IPD30N03S2L10ATMA1
TO-252-3, DPak (2 Leads + Tab), SC-63
IPD30N03S2L10ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW
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IPD30N03S2L10ATMA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 150 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1200pF @ 25V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.When the device is turned off, a turn-off delay time of 29 ns occurs as the input capacitance charges before drain current conduction commences.There is a peak drain current of 120A, its maximum pulsed drain current.Turn-on delay time is?the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.With 30V power, it supports a dual voltage supply of up to maximum.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.
IPD30N03S2L10ATMA1 Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 30A
the turn-off delay time is 29 ns
based on its rated peak drain current 120A.
IPD30N03S2L10ATMA1 Applications
There are a lot of Infineon Technologies IPD30N03S2L10ATMA1 applications of single MOSFETs transistors.
- DC/DC converters
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Telecom 1 Sever Power Supplies
- Motor Drives and Uninterruptible Power Supples
- Motor control
- Server power supplies
- Industrial Power Supplies
- Power Tools
- Micro Solar Inverter
- LCD/LED/ PDP TV Lighting
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IPD30N03S2L10ATMA1
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