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  • IPB100N04S2L03ATMA2

IPB100N04S2L03ATMA2

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Manufacturer No:

IPB100N04S2L03ATMA2

Manufacturer:

Infineon Technologies

HK JDW NO:

376-IPB100N04S2L03ATMA2

Package:

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Description:

IPB100N04S2L03ATMA2 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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IPB100N04S2L03ATMA2 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 810 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 6000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.In this device, the drain-source breakdown voltage is 40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Turn-Off delay time?is?the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 77 ns.IDM is the?maximum rated peak drain current?for a power MOSFET, and its maximal pulsed drain current is 400A.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 19 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 40V.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

IPB100N04S2L03ATMA2 Features


the avalanche energy rating (Eas) is 810 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 77 ns
based on its rated peak drain current 400A.

IPB100N04S2L03ATMA2 Applications


There are a lot of Infineon Technologies IPB100N04S2L03ATMA2 applications of single MOSFETs transistors.

  • Uninterruptible Power Supply
  • Micro Solar Inverter
  • Solar Inverter
  • Synchronous Rectification
  • Battery Protection Circuit
  • Server power supplies
  • LCD/LED/ PDP TV Lighting
  • General Purpose Interfacing Switch
  • AC-DC Power Supply
  • Lighting
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

IPB100N04S2L03ATMA2

technical specifications, attributes, parameters and parts with similar specifications to IPB100N04S2L03ATMA2.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    31 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2006

  • Series

    OptiMOS™

  • Pbfree Code

    yes

  • Part Status

    Not For New Designs

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    2

  • ECCN Code

    EAR99

  • Additional Feature

    AVALANCHE RATED

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    NOT SPECIFIED

  • Time@Peak Reflow Temperature-Max (s)

    NOT SPECIFIED

  • JESD-30 Code

    R-PSSO-G2

  • Number of Elements

    1

  • Power Dissipation-Max

    300W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    300W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    19 ns

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    3m Ω @ 80A, 10V

  • Vgs(th) (Max) @ Id

    2V @ 250μA

  • Halogen Free

    Halogen Free

  • Input Capacitance (Ciss) (Max) @ Vds

    6000pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    100A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    230nC @ 10V

  • Rise Time

    51ns

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    27 ns

  • Turn-Off Delay Time

    77 ns

  • Continuous Drain Current (ID)

    100A

  • Gate to Source Voltage (Vgs)

    20V

  • Max Dual Supply Voltage

    40V

  • Drain to Source Breakdown Voltage

    40V

  • Pulsed Drain Current-Max (IDM)

    400A

  • Avalanche Energy Rating (Eas)

    810 mJ

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Contains Lead

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