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FDS6612A
FDS6612A
598-FDS6612A
8-SOIC (0.154, 3.90mm Width)
FDS6612A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW
In Stock : 999
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Product Details
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FDS6612A MOSFET Description
FDS6612A is an N-Channel MOSFET adopting Onsemi's PowerTrench technology to enhance its low on-resistance performance and the overall switching characteristics. It is capable of switching small to medium loads. Its Drain-Source voltage is 30 V and is able to work over -55~150 ℃.
FDS6612A MOSFET Features
Low gate charge
8.4 A, 30 V
RDS(ON) = 22 mΩ @ VGS = 10 V
Fast switching speed
RDS(ON) = 30 mΩ @ VGS = 4.5 V
High-performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDS6612A MOSFET Applications
Automotive
Consumer
DC-DC
AC/DC power supplies
Telecom
Buck-boost converters
UPS
eMobility
Onboard charger
Motor control
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FDS6612A
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