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  • FDP18N50

FDP18N50

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Manufacturer No:

FDP18N50

Manufacturer:

ON Semiconductor

HK JDW NO:

598-FDP18N50

Package:

TO-220-3

Datasheet:

FDP18N50

Description:

FDP18N50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

FDP18N50

technical specifications, attributes, parameters and parts with similar specifications to FDP18N50.

  • Type
    Parameter
    Select All
  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    265m Ω @ 9A, 10V

  • Vgs(th) (Max) @ Id

    5V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    2860pF @ 25V

  • Gate Charge (Qg) (Max) @ Vgs

    60nC @ 10V

  • Rise Time

    165ns

  • Fall Time (Typ)

    90 ns

  • Gate to Source Voltage (Vgs)

    30V

  • Drain to Source Breakdown Voltage

    500V

  • Current - Continuous Drain (Id) @ 25°C

    18A Tc

  • Avalanche Energy Rating (Eas)

    945 mJ

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±30V

  • Factory Lead Time

    9 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 2 days ago)

  • Mount

    Through Hole

  • Packaging

    Tube

  • Published

    2013

  • Series

    UniFET™

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Length

    10.1mm

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Contact Plating

    Tin

  • Current Rating

    18A

  • Radiation Hardening

    No

  • Number of Pins

    3

  • Additional Feature

    FAST SWITCHING

  • Package / Case

    TO-220-3

  • REACH SVHC

    No SVHC

  • Height

    9.4mm

  • Width

    4.7mm

  • Resistance

    265MOhm

  • Mounting Type

    Through Hole

  • Operating Temperature

    -55°C~150°C TJ

  • Voltage - Rated DC

    500V

  • Technology

    MOSFET (Metal Oxide)

  • Operating Mode

    ENHANCEMENT MODE

  • Current

    18A

  • JESD-609 Code

    e3

  • Subcategory

    FET General Purpose Power

  • Voltage

    500V

  • Number of Elements

    1

  • JEDEC-95 Code

    TO-220AB

  • Element Configuration

    Single

  • Power Dissipation

    235W

  • Turn On Delay Time

    55 ns

  • Threshold Voltage

    5V

  • Power Dissipation-Max

    235W Tc

  • Continuous Drain Current (ID)

    18A

  • Transistor Application

    SWITCHING

  • Turn-Off Delay Time

    95 ns

  • Transistor Element Material

    SILICON

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