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CSD86330Q3D

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Manufacturer No:

CSD86330Q3D

Manufacturer:

Texas Instruments

HK JDW NO:

815-CSD86330Q3D

Package:

8-PowerLDFN

Datasheet:

-

Description:

CSD86330Q3D datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Texas Instruments stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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CSD86330Q3D     Description

The CSD86330Q3D NexFETM power module is optimized for synchronous locking applications and provides high current, efficiency, and high frequency performance in a small form factor of 3.3 mm x 3.3 mm. Optimized for 5V gate driver applications this product provides a flexible solution that provides high-density power when used in conjunction with any 5V gate driver of an external controller / driver.


CSD86330Q3D    Features

Half-Bridge Power Block

90% System Efficiency at 15A Up to 20 A Operation

High Frequency Operation(Up To1.5 MHz)

High Density-SON 3.3mmx3.3mm Footprint Optimized for 5 V Gate Drive Low Switching Losses

Uitra Low Inductance Package RoHS Compliant Halogen Free

Pb-Free Terminal Plating

CSD86330Q3D       Applications

Synchronous Buck Converters -High Frequency Applications

- High CurrentLow Duty CycleApplications Multiphase Synchronous Buck Converters POL DC-DC Converters

IMVP,VRM,and VRD Applications


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

CSD86330Q3D

technical specifications, attributes, parameters and parts with similar specifications to CSD86330Q3D.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    6 Weeks

  • Lifecycle Status

    ACTIVE (Last Updated: 4 days ago)

  • Mount

    Surface Mount

  • Packaging

    Tape & Reel (TR)

  • Series

    NexFET™

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    8

  • ECCN Code

    EAR99

  • Length

    3.3mm

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Contains Lead

  • Contact Plating

    Tin

  • Radiation Hardening

    No

  • Number of Pins

    8

  • Package / Case

    8-PowerLDFN

  • REACH SVHC

    No SVHC

  • Height

    1.5mm

  • Width

    3.3mm

  • Thickness

    1.5mm

  • Mounting Type

    Surface Mount

  • Operating Temperature

    -55°C~150°C TJ

  • Number of Functions

    1

  • JESD-609 Code

    e3

  • Peak Reflow Temperature (Cel)

    260

  • Supply Voltage

    12V

  • Base Part Number

    CSD86330

  • Pin Count

    8

  • Terminal Pitch

    0.65mm

  • Supply Voltage-Max (Vsup)

    22V

  • Max Power Dissipation

    6W

  • Element Configuration

    Dual

  • Power Dissipation

    6W

  • Turn On Delay Time

    5.3 ns

  • Interface IC Type

    BUFFER OR INVERTER BASED MOSFET DRIVER

  • Threshold Voltage

    1.4V

  • Continuous Drain Current (ID)

    20A

  • Turn-Off Delay Time

    15.8 ns

  • FET Type

    2 N-Channel (Half Bridge)

  • Rds On (Max) @ Id, Vgs

    9.6m Ω @ 14A, 8V

  • Vgs(th) (Max) @ Id

    2.1V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    920pF @ 12.5V

  • Gate Charge (Qg) (Max) @ Vgs

    6.2nC @ 4.5V

  • Gate to Source Voltage (Vgs)

    8V

  • Drain to Source Breakdown Voltage

    25V

  • FET Feature

    Logic Level Gate

  • Nominal Vgs

    1.4 V

  • Drain to Source Voltage (Vdss)

    25V

  • Input Characteristics

    STANDARD

  • High Side Driver

    NO

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