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BUL89
BUL89
761-BUL89
TO-220-3
BUL89 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at HK JDW
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BUL89 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 10 @ 5A 5V.A collector emitter saturation voltage of 1V allows maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.With the emitter base voltage set at 9V, an efficient operation can be achieved.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 12A current rating.A maximum collector current of 12A volts is possible.
BUL89 Features
the DC current gain for this device is 10 @ 5A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 5V @ 2.4A, 12A
the emitter base voltage is kept at 9V
the current rating of this device is 12A
BUL89 Applications
There are a lot of STMicroelectronics BUL89 applications of single BJT transistors.
- Muting
- Driver
- Inverter
- Interface
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BUL89
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