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  • BSZ520N15NS3GATMA1

BSZ520N15NS3GATMA1

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Manufacturer No:

BSZ520N15NS3GATMA1

Manufacturer:

Infineon Technologies

HK JDW NO:

376-BSZ520N15NS3GATMA1

Package:

8-PowerTDFN

Description:

BSZ520N15NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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BSZ520N15NS3GATMA1 Description


The CoolMOS, OptiMOS, and Strong IRFET families are among the several MOSFET devices offered by Infineon. They provide best-in-class performance, resulting in increased efficiency, power density, and cost effectiveness. AEC-Q101 industry standards Automotive approved MOSFETs benefit designs needing high quality and additional protection features.



BSZ520N15NS3GATMA1 Features


  • Pin Count: 8

  • Maximum Drain Source Resistance: 52 mΩ

  • Channel Mode Enhancement

  • Maximum Gate Threshold Voltage: 4V

  • Minimum Gate Threshold Voltage: 2V

  • Maximum Power Dissipation: 57 W

  • Transistor Configuration Single

  • Maximum Gate Source Voltage: -20 V, +20 V

  • Length: 3.4mm



BSZ520N15NS3GATMA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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Payment Method

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From $40.00 basic shipping fee depend on zone and country.
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From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

BSZ520N15NS3GATMA1

technical specifications, attributes, parameters and parts with similar specifications to BSZ520N15NS3GATMA1.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    18 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    8-PowerTDFN

  • Number of Pins

    8

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2011

  • Series

    OptiMOS™

  • JESD-609 Code

    e3

  • Pbfree Code

    no

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    5

  • ECCN Code

    EAR99

  • Terminal Finish

    Matte Tin (Sn)

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • Pin Count

    8

  • JESD-30 Code

    S-PDSO-N5

  • Number of Elements

    1

  • Configuration

    SINGLE WITH BUILT-IN DIODE

  • Power Dissipation-Max

    57W Tc

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    57W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    7 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    52m Ω @ 18A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 35μA

  • Halogen Free

    Halogen Free

  • Input Capacitance (Ciss) (Max) @ Vds

    890pF @ 75V

  • Current - Continuous Drain (Id) @ 25°C

    21A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    12nC @ 10V

  • Rise Time

    5ns

  • Drive Voltage (Max Rds On,Min Rds On)

    8V 10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    3 ns

  • Turn-Off Delay Time

    10 ns

  • Continuous Drain Current (ID)

    21A

  • Gate to Source Voltage (Vgs)

    20V

  • Max Dual Supply Voltage

    150V

  • Drain-source On Resistance-Max

    0.052Ohm

  • Avalanche Energy Rating (Eas)

    60 mJ

  • Radiation Hardening

    No

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Contains Lead

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