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  • BSS123NH6433XTMA1

BSS123NH6433XTMA1

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Manufacturer No:

BSS123NH6433XTMA1

Manufacturer:

Infineon Technologies

HK JDW NO:

376-BSS123NH6433XTMA1

Package:

TO-236-3, SC-59, SOT-23-3

Datasheet:

BSS123NH6433XTMA1

Description:

BSS123NH6433XTMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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BSS123NH6433XTMA1 MOSFET Description


The BSS123NH6433XTMA1 is a small N-Channel Logic Level Mosfet. Because of its low threshold voltage of 01.7V, the MOSFET can be used in any low voltage application circuit as well as for level shifting applications. In addition, the Mosfet has a low on-state resistance and a low input capacitance, which makes it efficient in switching circuits because it requires less gate current even at high speeds.



BSS123NH6433XTMA1 MOSFET Features


Logic level (4.5V rated)

Qualified according to AEC Q100

Pb-free lead plating; RoHS compliant

Avalanche rated

Enhancement mode



BSS123NH6433XTMA1 MOSFET Applications


eMobility

Motor control

Consumer

DC-DC

Onboard charger

Automotive

Telecom 


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

BSS123NH6433XTMA1

technical specifications, attributes, parameters and parts with similar specifications to BSS123NH6433XTMA1.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    10 Weeks

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-236-3, SC-59, SOT-23-3

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Cut Tape (CT)

  • Published

    2012

  • Series

    OptiMOS™

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • Additional Feature

    LOGIC LEVEL COMPATIBLE

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Reference Standard

    AEC-Q101

  • Number of Elements

    1

  • Power Dissipation-Max

    500mW Ta

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Turn On Delay Time

    2.3 ns

  • FET Type

    N-Channel

  • Rds On (Max) @ Id, Vgs

    6 Ω @ 190mA, 10V

  • Vgs(th) (Max) @ Id

    1.8V @ 13μA

  • Input Capacitance (Ciss) (Max) @ Vds

    20.9pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    190mA Ta

  • Gate Charge (Qg) (Max) @ Vgs

    0.9nC @ 10V

  • Rise Time

    3.2ns

  • Drain to Source Voltage (Vdss)

    100V

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    22 ns

  • Turn-Off Delay Time

    7.4 ns

  • Continuous Drain Current (ID)

    190mA

  • Gate to Source Voltage (Vgs)

    20V

  • Drain Current-Max (Abs) (ID)

    0.19A

  • Drain-source On Resistance-Max

    6Ohm

  • DS Breakdown Voltage-Min

    100V

  • Height

    1mm

  • Length

    2.9mm

  • Width

    1.3mm

  • RoHS Status

    ROHS3 Compliant

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