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  • BSP315PH6327XTSA1

BSP315PH6327XTSA1

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Manufacturer No:

BSP315PH6327XTSA1

Manufacturer:

Infineon Technologies

HK JDW NO:

376-BSP315PH6327XTSA1

Package:

TO-261-4, TO-261AA

Datasheet:

BSP315PH6327XTSA1

Description:

BSP315PH6327XTSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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BSP315PH6327XTSA1 Description

 

 BSP315PH6327XTSA1 are small signal transistors which are transistors used to amplify low-level signals, but they can also be used as switches. The typical IC values of small signal transistors are between 10 and 500, and the maximum HFE rating is between 80 and 600 mA. They come in two forms: NPN and PNP.

 

 

BSP315PH6327XTSA1 Features


·P-Channel Enhancement mode Avalanche rated

·Logic Level

·dv/dtrated

·Pb-free lead plating;RoHS compliant

·Qualified according to AEC Q101

·Halogen-free according to IEC61249-2-21

 

BSP315PH6327XTSA1 Applications

 

Small-Signal-Transistor

 

 


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

BSP315PH6327XTSA1

technical specifications, attributes, parameters and parts with similar specifications to BSP315PH6327XTSA1.

  • Type
    Parameter
    Select All
  • Termination

    SMD/SMT

  • ECCN Code

    EAR99

  • Additional Feature

    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

  • Subcategory

    Other Transistors

  • Technology

    MOSFET (Metal Oxide)

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Time@Peak Reflow Temperature-Max (s)

    40

  • Pin Count

    4

  • Number of Elements

    1

  • Number of Channels

    1

  • Power Dissipation-Max

    1.8W Ta

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    1.8W

  • Case Connection

    DRAIN

  • Turn On Delay Time

    24 ns

  • FET Type

    P-Channel

  • Rds On (Max) @ Id, Vgs

    800m Ω @ 1.17A, 10V

  • Vgs(th) (Max) @ Id

    2V @ 160μA

  • Halogen Free

    Halogen Free

  • Input Capacitance (Ciss) (Max) @ Vds

    160pF @ 25V

  • Current - Continuous Drain (Id) @ 25°C

    1.17A Ta

  • Gate Charge (Qg) (Max) @ Vgs

    7.8nC @ 10V

  • Rise Time

    9ns

  • Drain to Source Voltage (Vdss)

    60V

  • Drive Voltage (Max Rds On,Min Rds On)

    4.5V 10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    19 ns

  • Turn-Off Delay Time

    32 ns

  • Continuous Drain Current (ID)

    1.17A

  • Threshold Voltage

    -1.5V

  • Gate to Source Voltage (Vgs)

    20V

  • Max Dual Supply Voltage

    -60V

  • Drain-source On Resistance-Max

    0.8Ohm

  • Drain to Source Breakdown Voltage

    -60V

  • Dual Supply Voltage

    -60V

  • Recovery Time

    46 ns

  • Max Junction Temperature (Tj)

    150°C

  • Nominal Vgs

    -1.5 V

  • Height

    1.8mm

  • Length

    6.5mm

  • Width

    6.7mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

  • Factory Lead Time

    10 Weeks

  • Contact Plating

    Tin

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-261-4, TO-261AA

  • Number of Pins

    4

  • Transistor Element Material

    SILICON

  • Manufacturer Package Identifier

    PG-SOT223-4

  • Operating Temperature

    -55°C~150°C TJ

  • Packaging

    Cut Tape (CT)

  • Published

    1999

  • Series

    SIPMOS®

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    4

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