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BD435
BD435
761-BD435
TO-225AA, TO-126-3
BD435 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at HK JDW
In Stock : 999
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BD435 Overview
DC current gain in this device equals 40 @ 10mA 5V, which is the ratio of the base current to the collector current.With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 200mA, 2A.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 3MHz.During maximum operation, collector current can be as low as 4A volts.
BD435 Features
the DC current gain for this device is 40 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 3MHz
BD435 Applications
There are a lot of STMicroelectronics BD435 applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
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BD435
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