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  • BC857CT,115

BC857CT,115

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Manufacturer No:

BC857CT,115

Manufacturer:

NXP Semiconductors

HK JDW NO:

318-BC857CT,115

Package:

SC-75, SOT-416

Datasheet:

BC857CT,115

Description:

BC857CT,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from NXP USA Inc. stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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BC857CT,115 Overview


DC current gain in this device equals 420 @ 2mA 5V, which is the ratio of the base current to the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 5mA, 100mA.As a result, the part has a transition frequency of 100MHz.There is a 45V maximal voltage in the device due to collector-emitter breakdown.

BC857CT,115 Features


the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz

BC857CT,115 Applications


There are a lot of NXP USA Inc. BC857CT,115 applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface
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Package

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BC857CT,115

technical specifications, attributes, parameters and parts with similar specifications to BC857CT,115.

  • Type
    Parameter
    Select All
  • Mounting Type

    Surface Mount

  • Package / Case

    SC-75, SOT-416

  • Surface Mount

    YES

  • Transistor Element Material

    SILICON

  • Operating Temperature

    150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2009

  • Series

    Automotive, AEC-Q101

  • JESD-609 Code

    e3

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Tin (Sn)

  • Subcategory

    Other Transistors

  • Terminal Position

    DUAL

  • Terminal Form

    GULL WING

  • Peak Reflow Temperature (Cel)

    260

  • Time@Peak Reflow Temperature-Max (s)

    40

  • Base Part Number

    BC857

  • Pin Count

    3

  • JESD-30 Code

    R-PDSO-G3

  • Qualification Status

    Not Qualified

  • Number of Elements

    1

  • Configuration

    SINGLE

  • Power - Max

    150mW

  • Transistor Application

    SWITCHING

  • Polarity/Channel Type

    PNP

  • Transistor Type

    PNP

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    420 @ 2mA 5V

  • Current - Collector Cutoff (Max)

    15nA ICBO

  • Vce Saturation (Max) @ Ib, Ic

    400mV @ 5mA, 100mA

  • Voltage - Collector Emitter Breakdown (Max)

    45V

  • Current - Collector (Ic) (Max)

    100mA

  • Transition Frequency

    100MHz

  • Frequency - Transition

    100MHz

  • Power Dissipation-Max (Abs)

    0.15W

  • RoHS Status

    ROHS3 Compliant

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