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BC848BWT106
BC848BWT106
687-BC848BWT106
SC-70, SOT-323
BC848BWT106 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at HK JDW
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BC848BWT106 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 5V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of 600mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.For high efficiency, the continuous collector voltage must be kept at 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.The current rating of this fuse is 100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 200MHz.The breakdown input voltage is 30V volts.Maximum collector currents can be below 100mA volts.
BC848BWT106 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 100mA
a transition frequency of 200MHz
BC848BWT106 Applications
There are a lot of ROHM Semiconductor BC848BWT106 applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
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BC848BWT106
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