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  • BC546B B1G

BC546B B1G

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Manufacturer No:

BC546B B1G

HK JDW NO:

799-BC546B B1G

Package:

TO-226-3, TO-92-3 (TO-226AA)

Datasheet:

BC546B B1G

Description:

BC546B B1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

Purchasing and Inquiry

BC546B B1G Overview


In this device, the DC current gain is 200 @ 2mA 5V, which is the ratio between the base current and the collector current.Product comes in TO-92 supplier package.There is a 65V maximal voltage in the device due to collector-emitter breakdown.

BC546B B1G Features


the DC current gain for this device is 200 @ 2mA 5V
the supplier device package of TO-92

BC546B B1G Applications


There are a lot of Taiwan Semiconductor Corporation BC546B B1G applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

BC546B B1G

technical specifications, attributes, parameters and parts with similar specifications to BC546B B1G.

  • Type
    Parameter
    Select All
  • Factory Lead Time

    24 Weeks

  • Mounting Type

    Through Hole

  • Package / Case

    TO-226-3, TO-92-3 (TO-226AA)

  • Supplier Device Package

    TO-92

  • Operating Temperature

    -65°C~150°C TJ

  • Packaging

    Bulk

  • Published

    2017

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Power - Max

    500mW

  • Transistor Type

    NPN

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    200 @ 2mA 5V

  • Current - Collector Cutoff (Max)

    15nA ICBO

  • Voltage - Collector Emitter Breakdown (Max)

    65V

  • Current - Collector (Ic) (Max)

    100mA

  • RoHS Status

    ROHS3 Compliant

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