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AUIRF3004WL

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Manufacturer No:

AUIRF3004WL

Manufacturer:

Infineon Technologies

HK JDW NO:

376-AUIRF3004WL

Package:

TO-262-3 Wide Leads

Datasheet:

AUIRF3004WL

Description:

AUIRF3004WL datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at HK JDW

Quantity:

In Stock : 999

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AUIRF3004WL Description


AUIRF3004WL is an Automotive Q101 40V Single N-Channel HEXFET Power MOSFET. The Infineon AUIRF3004WL can be applied in Brushed Motor Drive and Brushless Motor Drive, due to the following features. The Power MOSFET AUIRF3004WL is in the TO-262 Wide Lead Package with 375W power dissipation. It is specified for operation from –55°C to +175°C.



AUIRF3004WL Features


  • Advanced Process Technology

  • Ultra-Low On-Resistance

  • 50% Lower Lead Resistance

  • 175°C Operating Temperature

  • Fast Switching

  • Repetitive Avalanche Allowed up to Tjmax

  • Lead-Free, RoHS Compliant

  • Automotive Qualified *



AUIRF3004WL Applications


  • Brushed Motor Drive

  • Brushless Motor Drive

  • metal gearmotors

  • plastic gearmotors

  • automotive (particularly electric vehicles (EV))

  • HVAC

  • white goods and industrial


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Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:
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Payment Method

The fee is charged according to the rule of PayPal.
East West Bank charge US$30.00 banking fee.
The fee is charged according to the rule of PayPal.
Western Union charge US$0.00 banking fee.

Shipping

DHL(www.dhl.com)
From $40.00 basic shipping fee depend on zone and country.
UPS(www.ups.com)
From $40.00 basic shipping fee depend on zone and country.
FedEx(www.fedex.com)
From $40.00 basic shipping fee depend on zone and country.
Registered Mail(www.singpost.com)
From $10.00 basic shipping fee depend on different zone and country.

Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

AUIRF3004WL

technical specifications, attributes, parameters and parts with similar specifications to AUIRF3004WL.

  • Type
    Parameter
    Select All
  • Technology

    MOSFET (Metal Oxide)

  • Number of Elements

    1

  • Power Dissipation-Max

    375W Tc

  • Element Configuration

    Single

  • Operating Mode

    ENHANCEMENT MODE

  • Power Dissipation

    375W

  • Turn On Delay Time

    19 ns

  • FET Type

    N-Channel

  • Transistor Application

    SWITCHING

  • Rds On (Max) @ Id, Vgs

    1.4m Ω @ 195A, 10V

  • Vgs(th) (Max) @ Id

    4V @ 250μA

  • Input Capacitance (Ciss) (Max) @ Vds

    9450pF @ 32V

  • Current - Continuous Drain (Id) @ 25°C

    240A Tc

  • Gate Charge (Qg) (Max) @ Vgs

    210nC @ 10V

  • Rise Time

    220ns

  • Drive Voltage (Max Rds On,Min Rds On)

    10V

  • Vgs (Max)

    ±20V

  • Fall Time (Typ)

    130 ns

  • Turn-Off Delay Time

    90 ns

  • Continuous Drain Current (ID)

    240A

  • Threshold Voltage

    2V

  • JEDEC-95 Code

    TO-262AA

  • Gate to Source Voltage (Vgs)

    20V

  • Drain to Source Breakdown Voltage

    40V

  • Avalanche Energy Rating (Eas)

    470 mJ

  • Nominal Vgs

    2 V

  • Height

    11.3mm

  • Length

    10.67mm

  • Width

    4.83mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Factory Lead Time

    16 Weeks

  • Contact Plating

    Tin

  • Mount

    Surface Mount, Through Hole

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-262-3 Wide Leads

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    -55°C~175°C TJ

  • Packaging

    Tube

  • Published

    2011

  • Series

    HEXFET®

  • JESD-609 Code

    e3

  • Part Status

    Active

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Additional Feature

    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

  • Subcategory

    FET General Purpose Power

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