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2SD2701TL
2SD2701TL
687-2SD2701TL
3-SMD, Flat Lead
2SD2701TL datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at HK JDW
In Stock : 999
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2SD2701TL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 100mA 2V.A collector emitter saturation voltage of 140mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 50mA, 1A.In order to achieve high efficiency, the continuous collector voltage should be kept at 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.A transition frequency of 300MHz is present in the part.The breakdown input voltage is 12V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
2SD2701TL Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 140mV
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 300MHz
2SD2701TL Applications
There are a lot of ROHM Semiconductor 2SD2701TL applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting
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2SD2701TL
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