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2SD1898T100Q

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Manufacturer No:

2SD1898T100Q

Manufacturer:

ROHM Semiconductor

HK JDW NO:

687-2SD1898T100Q

Package:

TO-243AA

Datasheet:

-

Description:

2SD1898T100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at HK JDW

Quantity:

In Stock : 999

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Product Details

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2SD1898T100Q Overview


This device has a DC current gain of 120 @ 500mA 3V, which is the ratio between the collector current and the base current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 20mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at 1A to achieve high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (1A).Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 80V volts.When collector current reaches its maximum, it can reach 1A volts.

2SD1898T100Q Features


the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz

2SD1898T100Q Applications


There are a lot of ROHM Semiconductor 2SD1898T100Q applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter
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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

2SD1898T100Q

technical specifications, attributes, parameters and parts with similar specifications to 2SD1898T100Q.

  • Type
    Parameter
    Select All
  • Contact Plating

    Copper, Tin

  • Mount

    Surface Mount

  • Mounting Type

    Surface Mount

  • Package / Case

    TO-243AA

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    150°C TJ

  • Packaging

    Tape & Reel (TR)

  • Published

    2009

  • JESD-609 Code

    e2

  • Pbfree Code

    yes

  • Part Status

    Not For New Designs

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • Termination

    SMD/SMT

  • ECCN Code

    EAR99

  • Terminal Finish

    TIN COPPER

  • HTS Code

    8541.21.00.95

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    80V

  • Max Power Dissipation

    2W

  • Terminal Form

    FLAT

  • Peak Reflow Temperature (Cel)

    260

  • Current Rating

    1A

  • Time@Peak Reflow Temperature-Max (s)

    10

  • Base Part Number

    2SD1898

  • Pin Count

    3

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    500mW

  • Case Connection

    COLLECTOR

  • Transistor Application

    SWITCHING

  • Gain Bandwidth Product

    100MHz

  • Polarity/Channel Type

    NPN

  • Transistor Type

    NPN

  • Collector Emitter Voltage (VCEO)

    80V

  • Max Collector Current

    1A

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    120 @ 500mA 3V

  • Current - Collector Cutoff (Max)

    1μA ICBO

  • Vce Saturation (Max) @ Ib, Ic

    400mV @ 20mA, 500mA

  • Collector Emitter Breakdown Voltage

    80V

  • Transition Frequency

    100MHz

  • Max Breakdown Voltage

    80V

  • Collector Base Voltage (VCBO)

    120V

  • Emitter Base Voltage (VEBO)

    5V

  • hFE Min

    82

  • Continuous Collector Current

    1A

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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