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2SD1767T100Q
2SD1767T100Q
687-2SD1767T100Q
SOT-89
2SD1767T100Q datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at HK JDW
In Stock : 999
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2SD1767T100Q Overview
With a collector emitter saturation voltage of 200mV, it offers maximum design flexibility.Continuous collector voltages of 700mA should be maintained to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 700mA.As you can see, the part has a transition frequency of 120MHz.The breakdown input voltage is 80V volts.The maximum collector current is 700mA volts.
2SD1767T100Q Features
a collector emitter saturation voltage of 200mV
the emitter base voltage is kept at 5V
the current rating of this device is 700mA
a transition frequency of 120MHz
2SD1767T100Q Applications
There are a lot of ROHM Semiconductor 2SD1767T100Q applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
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2SD1767T100Q
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