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2SAR533PT100
2SAR533PT100
687-2SAR533PT100
TO-243AA
2SAR533PT100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available at HK JDW
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2SAR533PT100 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 180 @ 50mA 3V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 50mA, 1A.A constant collector voltage of -3A is necessary for high efficiency.The emitter base voltage can be kept at -6V for high efficiency.In the part, the transition frequency is 300MHz.Single BJT transistor can be broken down at a voltage of 50V volts.A maximum collector current of 3A volts can be achieved.
2SAR533PT100 Features
the DC current gain for this device is 180 @ 50mA 3V
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at -6V
a transition frequency of 300MHz
2SAR533PT100 Applications
There are a lot of ROHM Semiconductor 2SAR533PT100 applications of single BJT transistors.
- Inverter
- Interface
- Muting
- Driver
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2SAR533PT100
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