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2SA1943-O(Q)
2SA1943-O(Q)
4669-2SA1943-O(Q)
TO-3PL
PNP150°C TJ5μA ICBO1 ElementsTO-3PLTubeThrough Hole
In Stock : 999
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Product Details
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2SA1943-O(Q) Overview
In this device, the DC current gain is 80 @ 1A 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -3V ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 800mA, 8A.The emitter base voltage can be kept at 5V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -15A current rating.In extreme cases, the collector current can be as low as 15A volts.
2SA1943-O(Q) Features
the DC current gain for this device is 80 @ 1A 5V
a collector emitter saturation voltage of -3V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
2SA1943-O(Q) Applications
There are a lot of Toshiba Semiconductor and Storage 2SA1943-O(Q) applications of single BJT transistors.
Muting
Inverter
Driver
Interface
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2SA1943-O(Q)
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