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2N2905A

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Manufacturer No:

2N2905A

Manufacturer:

STMicroelectronics

HK JDW NO:

761-2N2905A

Package:

TO-205AD, TO-39-3 Metal Can

Datasheet:

2N2905A

Description:

2N2905A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at HK JDW

Quantity:

In Stock : 999

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2N2905A Description


STM's 2N2905A is a through hole silicon planar PNP transistor packaged in a TO-19 metal container. Because of its fast switching, short turn-off, and low saturation voltage, this transistor is ideal for switching and amplification.



2N2905A Features


  • Collector emitter voltage (Vce) of -60V

  • Continuous collector current (Ic) of -600mA

  • Power dissipation of 600mW

  • Operating junction temperature range from -65??C to 200??C

  • Collector emitter saturation voltage of -400mV at Ic=150mA



2N2905A Applications


  • Signal Processing

  • Power Management

  • Portable Devices

  • Consumer Electronics

  • Industrial


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

2N2905A

technical specifications, attributes, parameters and parts with similar specifications to 2N2905A.

  • Type
    Parameter
    Select All
  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-205AD, TO-39-3 Metal Can

  • Number of Pins

    3

  • Weight

    4.535924g

  • Transistor Element Material

    SILICON

  • Manufacturer Package Identifier

    TO39-P008B

  • Operating Temperature

    175°C TJ

  • Packaging

    Tube

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Terminal Finish

    Matte Tin (Sn)

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    -60V

  • Max Power Dissipation

    600mW

  • Terminal Position

    BOTTOM

  • Terminal Form

    WIRE

  • Current Rating

    -600mA

  • Frequency

    200MHz

  • Base Part Number

    2N29

  • Pin Count

    3

  • Reference Standard

    CECC

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    600mW

  • Transistor Application

    SWITCHING

  • Gain Bandwidth Product

    200MHz

  • Polarity/Channel Type

    PNP

  • Transistor Type

    PNP

  • Collector Emitter Voltage (VCEO)

    -60V

  • Max Collector Current

    -600mA

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    100 @ 150mA 10V

  • Current - Collector Cutoff (Max)

    10nA ICBO

  • Vce Saturation (Max) @ Ib, Ic

    1.6V @ 50mA, 500mA

  • Collector Emitter Breakdown Voltage

    -60V

  • Voltage - Collector Emitter Breakdown (Max)

    60V

  • Current - Collector (Ic) (Max)

    600mA

  • Transition Frequency

    200MHz

  • Collector Emitter Saturation Voltage

    -1.6V

  • Collector Base Voltage (VCBO)

    -60V

  • Emitter Base Voltage (VEBO)

    -5V

  • hFE Min

    50

  • Max Junction Temperature (Tj)

    175°C

  • Turn On Time-Max (ton)

    45ns

  • Collector-Base Capacitance-Max

    8pF

  • Diameter

    9.4mm

  • Height

    6.6mm

  • Length

    9.4mm

  • Width

    9.4mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Lead Free

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