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2N2222A

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Manufacturer No:

2N2222A

Manufacturer:

STMicroelectronics

HK JDW NO:

761-2N2222A

Package:

TO-206AA, TO-18-3 Metal Can

Datasheet:

2N2222A

Description:

2N2222A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available at HK JDW

Quantity:

In Stock : 999

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2N2222A  Description

 

The 2N2222A is a NPN transistor, so the collector and emitter will remain open (reverse bias) while the footing remains on (reverse bias), while the collector and emitter will be closed (forward bias) when a signal is provided to the footing. The gain value of 2N2222A is from 110 to 800, which determines the amplification ability of the transistor.



2N2222A Features

 

The polarity of Transistor – NPN

Type of termination –Through Hole

Configuration of pin – a

Number of Pins -3

The voltage from collector terminal to emitter is 50V once the base terminal is open

The voltage from the emitter to the base terminal is 6V once the collector terminal is open

The voltage from the collector terminal to the base is 75V once the emitter terminal is open

The current Gain of DC is 100

DC collector current is 800mA

Accessible in the Package of To-92

Total power dissipation is 1W

The maximum base current is 5mA

Input capacitance is 25pF

Fall time is 60ns

Output capacitance is 8pF

Turn-on time is 25ns

 


 

2N2222A  Applications

 

This kind of transistor is mainly used for amplifying current

This transistor can be used as a switch for automatically switch ON/OFF any appliances.

It is used for PWM due to its quick response

Because of its fast response time, it can be used for pulse width modulation.

It is typically used in automation & embedded projects.

Audio Preamplifiers

Sensor Circuits

Audio Amplifier Stages

Used to switch several loads simultaneously

RF Circuits

Darlington Pairs

These transistors are used in Motor drive circuits like VFD or variable frequency drives.

Used in Rectifier Circuits & DC Inverters

It is used as an amplifier to amplify voltage, current & power.

Darlington pair transistors are used for attaining the maximum current from the emitter terminal to the collector.

As compared to the normal NPN BC547 transistor, the 2N2222 is extremely similar, but 2N2222 allows 800mA of collector current & also 652mW of power dissipation which can be utilized for driving larger loads as compared toBC547.

So, the 2N2222 transistor is the best choice for switching high current loads

 


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Package

Product
Step1Product
Casing drivepipe
Step2Casing drivepipe
Anti-static bag
Step3Anti-static bag
Packaging boxes
Step4Packaging boxes
Bar-code shipping tag
Step5Bar-code shipping tag

2N2222A

technical specifications, attributes, parameters and parts with similar specifications to 2N2222A.

  • Type
    Parameter
    Select All
  • Mount

    Through Hole

  • Mounting Type

    Through Hole

  • Package / Case

    TO-206AA, TO-18-3 Metal Can

  • Number of Pins

    3

  • Transistor Element Material

    SILICON

  • Operating Temperature

    175°C TJ

  • Packaging

    Bulk

  • JESD-609 Code

    e3

  • Pbfree Code

    yes

  • Part Status

    Obsolete

  • Moisture Sensitivity Level (MSL)

    1 (Unlimited)

  • Number of Terminations

    3

  • ECCN Code

    EAR99

  • Type

    Switch

  • Terminal Finish

    Matte Tin (Sn)

  • Additional Feature

    LOW LEAKAGE CURRENT

  • Subcategory

    Other Transistors

  • Voltage - Rated DC

    75V

  • Max Power Dissipation

    500mW

  • Terminal Position

    BOTTOM

  • Terminal Form

    WIRE

  • Current Rating

    600mA

  • Frequency

    300MHz

  • Base Part Number

    2N22

  • Pin Count

    3

  • Number of Elements

    1

  • Element Configuration

    Single

  • Power Dissipation

    500mW

  • Gain Bandwidth Product

    300MHz

  • Transistor Type

    NPN

  • Collector Emitter Voltage (VCEO)

    40V

  • Max Collector Current

    600mA

  • DC Current Gain (hFE) (Min) @ Ic, Vce

    100 @ 150mA 10V

  • Current - Collector Cutoff (Max)

    10nA ICBO

  • Vce Saturation (Max) @ Ib, Ic

    1V @ 50mA, 150mA

  • Collector Emitter Breakdown Voltage

    40V

  • Transition Frequency

    300MHz

  • Collector Emitter Saturation Voltage

    1V

  • Collector Base Voltage (VCBO)

    75V

  • Emitter Base Voltage (VEBO)

    6V

  • hFE Min

    40

  • VCEsat-Max

    1 V

  • Turn Off Time-Max (toff)

    285ns

  • Collector-Base Capacitance-Max

    8pF

  • Height

    5.3mm

  • Length

    5.8mm

  • Width

    5.8mm

  • Radiation Hardening

    No

  • REACH SVHC

    No SVHC

  • RoHS Status

    ROHS3 Compliant

  • Lead Free

    Contains Lead

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